TY - GEN
T1 - A Low Supply Voltage LC-VCO IC with a Drain Harmonic Tuned Filter in 40-nm SOI CMOS
AU - Fang, Mengchu
AU - Xu, Xiao
AU - Yoshimasu, Toshihiko
N1 - Funding Information:
The authors would like to thank GLOBALFOUNDRIES for chip fabrication. This work is supported by VLSI Design and Education Center (VDEC), University of Tokyo in collaboration with Cadence Design Systems, Inc., Menter Graphics, Inc., and Keysight Technologies Japan, Ltd. This work is a part of the outcome of research performed under a Waseda University Grant for Special Research Project (No.2017B-260).
Publisher Copyright:
© 2019 IEEE.
PY - 2019/5
Y1 - 2019/5
N2 - A low-supply-voltage 15-GHz-band LC-VCO IC is presented in this paper to improve the phase noise and FoM performance. The proposed VCO IC adopts a drain harmonic tuned filter and an LC bias circuit to realize high load impedance at the third harmonics and to amplify carrier signal for improving the phase noise performance. The LC-VCO IC is designed, fabricated and fully evaluated on wafer in 40-nm SOI CMOS. The fabricated VCO IC has exhibited a measured phase noise of -132.0 dBc/Hz at 10-MHz offset frequency from the 15.58 GHz carrier frequency and a measured FoMT of -197.5 dBc/Hz with a supply voltage of 0.45 V.
AB - A low-supply-voltage 15-GHz-band LC-VCO IC is presented in this paper to improve the phase noise and FoM performance. The proposed VCO IC adopts a drain harmonic tuned filter and an LC bias circuit to realize high load impedance at the third harmonics and to amplify carrier signal for improving the phase noise performance. The LC-VCO IC is designed, fabricated and fully evaluated on wafer in 40-nm SOI CMOS. The fabricated VCO IC has exhibited a measured phase noise of -132.0 dBc/Hz at 10-MHz offset frequency from the 15.58 GHz carrier frequency and a measured FoMT of -197.5 dBc/Hz with a supply voltage of 0.45 V.
KW - LC bias
KW - LC-VCO
KW - low supply voltage
KW - phase noise
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U2 - 10.1109/IEEE-IWS.2019.8803845
DO - 10.1109/IEEE-IWS.2019.8803845
M3 - Conference contribution
AN - SCOPUS:85071720117
T3 - 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings
BT - 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 IEEE MTT-S International Wireless Symposium, IWS 2019
Y2 - 19 May 2019 through 22 May 2019
ER -