A Metal Bump Bonding Method Using Ag Nanoparticles  as Intermediate Layer

Weixin Fu; Masatsugu Nimura; Takashi Kasahara; Hayata Mimatsu; Akiko Okada; Shuichi Shoji; Shugo Ishizuka; Jun Mizuno

doi:10.1007/s11664-015-3932-0

A Metal Bump Bonding Method Using Ag Nanoparticles as Intermediate Layer

Weixin Fu, Masatsugu Nimura, Takashi Kasahara, Hayata Mimatsu, Akiko Okada, Shuichi Shoji, Shugo Ishizuka, Jun Mizuno^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The future development of low-temperature and low-pressure bonding technology is necessary for fine-pitch bump application. We propose a bump structure using Ag nanoparticles as an intermediate layer coated on a fine-pitch Cu pillar bump. The intermediate layer is prepared using an efficient and cost-saving squeegee-coating method followed by a 100°C baking process. This bump structure can be easily flattened before the bonding process, and the low-temperature sinterability of the nanoparticles is retained. The bonding experiment was successfully performed at 250°C and 39.8 MPa and the bonding strength was comparable to that achieved via other bonding technology utilizing metal particles or porous material as bump materials.

Original language	English
Pages (from-to)	4646-4652
Number of pages	7
Journal	Journal of Electronic Materials
Volume	44
Issue number	11
DOIs	https://doi.org/10.1007/s11664-015-3932-0
Publication status	Published - 2015 Nov 1

Keywords

Ag nanoparticle
Flip-chip bonding
fine-pitch bump
low-pressure bonding
low-temperature bonding
metal bump bonding
sintering bonding

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s11664-015-3932-0

Cite this

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title = "A Metal Bump Bonding Method Using Ag Nanoparticles as Intermediate Layer",

abstract = "The future development of low-temperature and low-pressure bonding technology is necessary for fine-pitch bump application. We propose a bump structure using Ag nanoparticles as an intermediate layer coated on a fine-pitch Cu pillar bump. The intermediate layer is prepared using an efficient and cost-saving squeegee-coating method followed by a 100°C baking process. This bump structure can be easily flattened before the bonding process, and the low-temperature sinterability of the nanoparticles is retained. The bonding experiment was successfully performed at 250°C and 39.8 MPa and the bonding strength was comparable to that achieved via other bonding technology utilizing metal particles or porous material as bump materials.",

keywords = "Ag nanoparticle, Flip-chip bonding, fine-pitch bump, low-pressure bonding, low-temperature bonding, metal bump bonding, sintering bonding",

author = "Weixin Fu and Masatsugu Nimura and Takashi Kasahara and Hayata Mimatsu and Akiko Okada and Shuichi Shoji and Shugo Ishizuka and Jun Mizuno",

note = "Funding Information: This work has been partly supported by the Japan Ministry of Education, Culture, Sports, Science and Technology (MEXT), a Grant-in-Aid for Scientific Basic Research (S) No. 23226010, the Specially Promoted Research “Establishment of Electrochemical Device Engineering”, and a Grant-in-Aid for Cooperative Research Project Nationwide Joint-Use Research Institute on Advanced Materials Development and Integration of Novel Structured Metallic and Inorganic Materials from MEXT. This work is also partly supported by JSPS KAKENHI Grant Number 25289241. The authors also wish to acknowledge the support provided by the MEXT Nanotechnology Platform Support Project of Waseda University. Publisher Copyright: {\textcopyright} 2015, The Minerals, Metals & Materials Society.",

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AU - Okada, Akiko

AU - Shoji, Shuichi

AU - Ishizuka, Shugo

AU - Mizuno, Jun

N1 - Funding Information: This work has been partly supported by the Japan Ministry of Education, Culture, Sports, Science and Technology (MEXT), a Grant-in-Aid for Scientific Basic Research (S) No. 23226010, the Specially Promoted Research “Establishment of Electrochemical Device Engineering”, and a Grant-in-Aid for Cooperative Research Project Nationwide Joint-Use Research Institute on Advanced Materials Development and Integration of Novel Structured Metallic and Inorganic Materials from MEXT. This work is also partly supported by JSPS KAKENHI Grant Number 25289241. The authors also wish to acknowledge the support provided by the MEXT Nanotechnology Platform Support Project of Waseda University. Publisher Copyright: © 2015, The Minerals, Metals & Materials Society.

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