A nano-power switched-capacitor voltage reference using body effect in MOSFETs for application in subthreshold LSI

Hao Zhang; Mengshu Huang; Yimeng Zhang; Xutao Li; Tsutomu Yoshihara

doi:10.1109/EDSSC.2013.6628130

A nano-power switched-capacitor voltage reference using body effect in MOSFETs for application in subthreshold LSI

Hao Zhang, Mengshu Huang, Yimeng Zhang, Xutao Li, Tsutomu Yoshihara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Combining switched-capacitor technology with body effect in MOSFETs, a nano-power CMOS voltage reference is implemented in 0.18 μm standard CMOS technology. The low output breaking threshold restriction is produced without using any component subdivision, such that chip area is saved. Measurements show that the output voltage is about 123.3 mV, temperature coefficient is about 17.6 ppm/°C, and line sensitivity is 0.15 %/V. The supply current is less than 90 nA when the supply voltage is 1 V. The area occupation is about 0.03 mm².

Original language	English
Title of host publication	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs	https://doi.org/10.1109/EDSSC.2013.6628130
Publication status	Published - 2013
Event	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong Duration: 2013 Jun 3 → 2013 Jun 5

Other

Other	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
City	Hong Kong
Period	13/6/3 → 13/6/5

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/EDSSC.2013.6628130

Cite this

Zhang, H, Huang, M, Zhang, Y, Li, X & Yoshihara, T 2013, A nano-power switched-capacitor voltage reference using body effect in MOSFETs for application in subthreshold LSI. in 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013., 6628130, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, Hong Kong, 13/6/3. https://doi.org/10.1109/EDSSC.2013.6628130

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abstract = "Combining switched-capacitor technology with body effect in MOSFETs, a nano-power CMOS voltage reference is implemented in 0.18 μm standard CMOS technology. The low output breaking threshold restriction is produced without using any component subdivision, such that chip area is saved. Measurements show that the output voltage is about 123.3 mV, temperature coefficient is about 17.6 ppm/°C, and line sensitivity is 0.15 %/V. The supply current is less than 90 nA when the supply voltage is 1 V. The area occupation is about 0.03 mm2.",

author = "Hao Zhang and Mengshu Huang and Yimeng Zhang and Xutao Li and Tsutomu Yoshihara",

year = "2013",

doi = "10.1109/EDSSC.2013.6628130",

language = "English",

isbn = "9781467325233",

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note = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 ; Conference date: 03-06-2013 Through 05-06-2013",

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AU - Huang, Mengshu

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AU - Li, Xutao

AU - Yoshihara, Tsutomu

PY - 2013

Y1 - 2013

N2 - Combining switched-capacitor technology with body effect in MOSFETs, a nano-power CMOS voltage reference is implemented in 0.18 μm standard CMOS technology. The low output breaking threshold restriction is produced without using any component subdivision, such that chip area is saved. Measurements show that the output voltage is about 123.3 mV, temperature coefficient is about 17.6 ppm/°C, and line sensitivity is 0.15 %/V. The supply current is less than 90 nA when the supply voltage is 1 V. The area occupation is about 0.03 mm2.

AB - Combining switched-capacitor technology with body effect in MOSFETs, a nano-power CMOS voltage reference is implemented in 0.18 μm standard CMOS technology. The low output breaking threshold restriction is produced without using any component subdivision, such that chip area is saved. Measurements show that the output voltage is about 123.3 mV, temperature coefficient is about 17.6 ppm/°C, and line sensitivity is 0.15 %/V. The supply current is less than 90 nA when the supply voltage is 1 V. The area occupation is about 0.03 mm2.

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DO - 10.1109/EDSSC.2013.6628130

M3 - Conference contribution

AN - SCOPUS:84890525439

SN - 9781467325233

BT - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

T2 - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Y2 - 3 June 2013 through 5 June 2013

ER -

A nano-power switched-capacitor voltage reference using body effect in MOSFETs for application in subthreshold LSI

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