A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate

T. Makimoto*, K. Kumakura, M. Maeda, H. Yamamoto, Y. Horikoshi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


A 20 nm-thick AlON buffer layer consisting of Al2O3, graded AlON, AlN, and thin Al2O3 amorphous films was used to grow AlN on a sapphire substrate by molecular beam epitaxy with radio frequency plasma for nitrogen source (RF-MBE). Mirror-smooth AlN layers were successfully obtained using this new AlON buffer layer. The total threading dislocation densities of AlN layers are comparable to those reported for the high-quality AlN layers grown by RF-MBE using the conventional low-temperature (LT) buffer layer.

Original languageEnglish
Pages (from-to)138-140
Number of pages3
JournalJournal of Crystal Growth
Publication statusPublished - 2015 Jul 28


  • A3. Molecular beam epitaxy
  • B1. AlON
  • B1. Nitrides
  • B1. Sapphire
  • B2. AlN
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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