A new electrodeposition process of crystalline silicon utilizing water-soluble KF-KCl molten salt

Kazuma Maeda*, Kouji Yasuda, Toshiyuki Nohira, Rika Hagiwara, Takayuki Homma

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

Toward the establishment of a new electrodeposition process of Si, the optimum conditions for obtaining adherent, compact and smooth Si film in molten KF-KCl-K2SiF6 were investigated. Galvanostatic electrolysis was conducted on an Ag substrate in eutectic KF-KCl (45:55 mol%) with various current densities (10- 500 mA cm-2) and K2SiF6 concentrations (0.50-5.0 mol%) at 923 K. Cross-sectional SEM observation of the deposits revealed that compact and smooth Si films form at intermediate K2SiF6 concentration and current density. The morphology of the Si deposit changed into nodular at higher current density. At lower current density, detachment of Si layer from the Ag substrate occurred during the water washing. The relationship between the deposition conditions and Si morphology is discussed from the view point of electrodeposition mechanism.

Original languageEnglish
Title of host publicationMolten Salts and Ionic Liquids 19
EditorsHugh C. De Long, W. Matthew Reichert, Paul C. Trulove, Luke M. Haverhals, Minoru Mizuhata, Robert A. Mantz, Adriana Ispas, Andreas Bund
PublisherElectrochemical Society Inc.
Pages285-291
Number of pages7
Edition4
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2014
Event19th International Symposium on Molten Salts and Ionic Liquids, MS and IL 2014, part of the Joint Meeting of the 226th ECS Meeting and 29th SMEQ Meeting - Cancun, Mexico
Duration: 2014 Oct 52014 Oct 9

Publication series

NameECS Transactions
Number4
Volume64
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference19th International Symposium on Molten Salts and Ionic Liquids, MS and IL 2014, part of the Joint Meeting of the 226th ECS Meeting and 29th SMEQ Meeting
Country/TerritoryMexico
CityCancun
Period14/10/514/10/9

ASJC Scopus subject areas

  • Engineering(all)

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