TY - JOUR
T1 - A New On-Chip Voltage Converter for Submicrometer High-Density DRAM's
AU - Furuyama, Tohru
AU - Watanabe, Yorji
AU - Ohsawa, Takashi
AU - Watanabe, Shigeyoshi
PY - 1987/6
Y1 - 1987/6
N2 - A new on-chip voltage converter has been developed and its characteristics have been examined. The converter is a feedback-type voltage regulator, and it supplies a reduced voltage to an entire RAM circuit. A novel timing activation method was introduced to save power. The converter has been implemented on an experimental 4-Mbit dynamic RAM. It was found that an even faster access time and higher reliability compared to a conventional design could be achieved by using an on-chip voltage converter and shorter channel transistors. This voltage converter is suitable for high-density, high-speed, and high-reliability DRAM's with submicrometer transistors.
AB - A new on-chip voltage converter has been developed and its characteristics have been examined. The converter is a feedback-type voltage regulator, and it supplies a reduced voltage to an entire RAM circuit. A novel timing activation method was introduced to save power. The converter has been implemented on an experimental 4-Mbit dynamic RAM. It was found that an even faster access time and higher reliability compared to a conventional design could be achieved by using an on-chip voltage converter and shorter channel transistors. This voltage converter is suitable for high-density, high-speed, and high-reliability DRAM's with submicrometer transistors.
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U2 - 10.1109/JSSC.1987.1052744
DO - 10.1109/JSSC.1987.1052744
M3 - Article
AN - SCOPUS:0022733092
SN - 0018-9200
VL - 22
SP - 437
EP - 441
JO - IEEE Journal of Solid-State Circuits
JF - IEEE Journal of Solid-State Circuits
IS - 3
ER -