A non-volatile, bistable, and rewritable memory device fabricated with poly(nitroxide radical) and silver salt layers

A non-volatile, bistable, and rewritable organic memory device was successfully fabricated with the layers of poly(2,2,6,6-tetramethylpiperidine-1-oxyl methacrylate) (PTMA) and poly(methyl methacrylate) (PMMA) containing silver salt. The PTMA layer was employed as a p-dopable material, while the silver salt-dispersed PMMA layer acted as an n-dopable material. The ON-OFF ratio between low-conductivity and high-conductivity states amounted to more than four orders of magnitude, and the retention time was longer than 10³ sec. The device was characterized by excellent rewritability.