A nanometer-scale nonvolatile switch composed of a solid electrolyte is <30nm and has an on-resistance <100Ω. A field programmable logic device and 1kb nonvolatile memory using the switch are demonstrated. The crossbar switch is fabricated in a 1.8V 0.18μm CMOS process.
|Journal||Digest of Technical Papers - IEEE International Solid-State Circuits Conference|
|Publication status||Published - 2004|
|Event||Digest of Technical Papers - 2004 IEEE International Solid-State Circuits Conference - San Francisco, CA., United States|
Duration: 2003 Feb 15 → 2003 Feb 19
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering