TY - GEN
T1 - A novel current reuse wideband amplifier using 130 nm Si CMOS technology for 22 - 29 GHz applications
AU - Liu, Q.
AU - Sun, J.
AU - Suh, Y. J.
AU - Kurachi, S.
AU - Itoh, N.
AU - Yoshimasu, T.
PY - 2009/12/31
Y1 - 2009/12/31
N2 - In this paper, a novel wideband amplifier is proposed for 22 - 29 GHz UWB applications in 0.13 um Si CMOS technology. In order to reduce the de current of the amplifier, a novel current reuse technique is adopted in a casco de CMOS transistor. In addition, a low-pass type feedback circuit for the first stage and an inductive feedback circuit for the second stage are designed to make the bandwidth wider. It is expected that the wideband amplifier exhibits a gain of 11.3 dB +/- 1.2 dB with a dc power consumption as low as 9.8 mW.
AB - In this paper, a novel wideband amplifier is proposed for 22 - 29 GHz UWB applications in 0.13 um Si CMOS technology. In order to reduce the de current of the amplifier, a novel current reuse technique is adopted in a casco de CMOS transistor. In addition, a low-pass type feedback circuit for the first stage and an inductive feedback circuit for the second stage are designed to make the bandwidth wider. It is expected that the wideband amplifier exhibits a gain of 11.3 dB +/- 1.2 dB with a dc power consumption as low as 9.8 mW.
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M3 - Conference contribution
AN - SCOPUS:72749110976
SN - 9781424448883
T3 - 2009 International Conference on Communications, Circuits and Systems, ICCCAS 2009
SP - 807
EP - 809
BT - 2009 International Conference on Communications, Circuits and Systems, ICCCAS 2009
T2 - 2009 International Conference on Communications, Circuits and Systems, ICCCAS 2009
Y2 - 23 July 2009 through 25 July 2009
ER -