A Novel Lateral Reverse Conducting Trench IGBT on SOI employing NPN bipolar with small area penalty and switching energy loss

Suyang Liu; Yue Zhang; Zijian Zhang; Masahide Inuishi

doi:10.1109/EDTM53872.2022.9798192

A Novel Lateral Reverse Conducting Trench IGBT on SOI employing NPN bipolar with small area penalty and switching energy loss

Suyang Liu, Yue Zhang, Zijian Zhang, Masahide Inuishi

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We propose a novel design of N-channel Reverse Conducting lateral IGBT (RC-LIGBT) based on silicon-on-insulator (SOI) technology with replacing an N+ anode by an NPN bipolar in the embedded diode region. The snap-back effect can be suppressed drastically by the proposed structure with simple fabrication process using one additional masking step of ion implantation as verified by the process and the device simulation. The use of trench structure and injection control drastically improves the trade of relationship between the turn-off energy loss and the structure shows the dynamic and the static forward blocking voltage of nearly 400V. The proposed structure has stronger thermal stability and can reduce the area penalty compared with the other structures ever reported.

Original language	English
Title of host publication	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	204-206
Number of pages	3
ISBN (Electronic)	9781665421775
DOIs	https://doi.org/10.1109/EDTM53872.2022.9798192
Publication status	Published - 2022
Event	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 - Virtual, Online, Japan Duration: 2022 Mar 6 → 2022 Mar 9

Publication series

Name	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Conference

Conference	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
Country/Territory	Japan
City	Virtual, Online
Period	22/3/6 → 22/3/9

ASJC Scopus subject areas

Process Chemistry and Technology
Hardware and Architecture
Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

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10.1109/EDTM53872.2022.9798192

Cite this

Liu, S., Zhang, Y., Zhang, Z., & Inuishi, M. (2022). A Novel Lateral Reverse Conducting Trench IGBT on SOI employing NPN bipolar with small area penalty and switching energy loss. In 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 (pp. 204-206). (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM53872.2022.9798192

A Novel Lateral Reverse Conducting Trench IGBT on SOI employing NPN bipolar with small area penalty and switching energy loss. / Liu, Suyang; Zhang, Yue; Zhang, Zijian et al.
6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 204-206 (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, S, Zhang, Y, Zhang, Z & Inuishi, M 2022, A Novel Lateral Reverse Conducting Trench IGBT on SOI employing NPN bipolar with small area penalty and switching energy loss. in 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, Institute of Electrical and Electronics Engineers Inc., pp. 204-206, 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, Virtual, Online, Japan, 22/3/6. https://doi.org/10.1109/EDTM53872.2022.9798192

Liu S, Zhang Y, Zhang Z, Inuishi M. A Novel Lateral Reverse Conducting Trench IGBT on SOI employing NPN bipolar with small area penalty and switching energy loss. In 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 204-206. (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022). doi: 10.1109/EDTM53872.2022.9798192

Liu, Suyang ; Zhang, Yue ; Zhang, Zijian et al. / A Novel Lateral Reverse Conducting Trench IGBT on SOI employing NPN bipolar with small area penalty and switching energy loss. 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 204-206 (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022).

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abstract = "We propose a novel design of N-channel Reverse Conducting lateral IGBT (RC-LIGBT) based on silicon-on-insulator (SOI) technology with replacing an N+ anode by an NPN bipolar in the embedded diode region. The snap-back effect can be suppressed drastically by the proposed structure with simple fabrication process using one additional masking step of ion implantation as verified by the process and the device simulation. The use of trench structure and injection control drastically improves the trade of relationship between the turn-off energy loss and the structure shows the dynamic and the static forward blocking voltage of nearly 400V. The proposed structure has stronger thermal stability and can reduce the area penalty compared with the other structures ever reported.",

author = "Suyang Liu and Yue Zhang and Zijian Zhang and Masahide Inuishi",

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doi = "10.1109/EDTM53872.2022.9798192",

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N2 - We propose a novel design of N-channel Reverse Conducting lateral IGBT (RC-LIGBT) based on silicon-on-insulator (SOI) technology with replacing an N+ anode by an NPN bipolar in the embedded diode region. The snap-back effect can be suppressed drastically by the proposed structure with simple fabrication process using one additional masking step of ion implantation as verified by the process and the device simulation. The use of trench structure and injection control drastically improves the trade of relationship between the turn-off energy loss and the structure shows the dynamic and the static forward blocking voltage of nearly 400V. The proposed structure has stronger thermal stability and can reduce the area penalty compared with the other structures ever reported.

AB - We propose a novel design of N-channel Reverse Conducting lateral IGBT (RC-LIGBT) based on silicon-on-insulator (SOI) technology with replacing an N+ anode by an NPN bipolar in the embedded diode region. The snap-back effect can be suppressed drastically by the proposed structure with simple fabrication process using one additional masking step of ion implantation as verified by the process and the device simulation. The use of trench structure and injection control drastically improves the trade of relationship between the turn-off energy loss and the structure shows the dynamic and the static forward blocking voltage of nearly 400V. The proposed structure has stronger thermal stability and can reduce the area penalty compared with the other structures ever reported.

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A Novel Lateral Reverse Conducting Trench IGBT on SOI employing NPN bipolar with small area penalty and switching energy loss

Abstract

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