A novel mobility-variation-free extraction technique of capacitance coupling coefficient for stacked flash memory cell

T. Okagaki; M. Tanizawa; M. Fujinaga; T. Kunikiyo; H. Yuki; K. Ishikawa; Y. Nishikawa; T. Eimori; M. Inuishi; Y. Oji

A novel mobility-variation-free extraction technique of capacitance coupling coefficient for stacked flash memory cell

T. Okagaki^*, M. Tanizawa, M. Fujinaga, T. Kunikiyo, H. Yuki, K. Ishikawa, Y. Nishikawa, T. Eimori, M. Inuishi, Y. Oji

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

We propose a novel extraction technique of the control gate capacitance coupling coefficient(α_g) for stacked gate flash memory cell. Five novel test patterns that the CBCM method is applied to, are developed to directly measure all the capacitances connected to the floating gate. Comparison of extracted α_g with the TCAD result proves the validity of this technique. Moreover, we have confirmed that conventional techniques, which use the channel current characteristics, overestimate the α_g variation due to channel mobility variation. Therefore direct α_g extraction using our proposed technique is necessary for precise process monitoring.

Original language	English
Pages	219-222
Number of pages	4
Publication status	Published - 2005 Nov 15
Externally published	Yes
Event	ICMTS 2005 - 2005 IEEE International Conference on Microelectronic Test Structures - Leuven, Belgium Duration: 2005 Apr 4 → 2005 Apr 7

Other

Other	ICMTS 2005 - 2005 IEEE International Conference on Microelectronic Test Structures
Country/Territory	Belgium
City	Leuven
Period	05/4/4 → 05/4/7

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Okagaki, T., Tanizawa, M., Fujinaga, M., Kunikiyo, T., Yuki, H., Ishikawa, K., Nishikawa, Y., Eimori, T., Inuishi, M., & Oji, Y. (2005). A novel mobility-variation-free extraction technique of capacitance coupling coefficient for stacked flash memory cell. 219-222. Paper presented at ICMTS 2005 - 2005 IEEE International Conference on Microelectronic Test Structures, Leuven, Belgium.

A novel mobility-variation-free extraction technique of capacitance coupling coefficient for stacked flash memory cell. / Okagaki, T.; Tanizawa, M.; Fujinaga, M. et al.
2005. 219-222 Paper presented at ICMTS 2005 - 2005 IEEE International Conference on Microelectronic Test Structures, Leuven, Belgium.

Research output: Contribution to conference › Paper › peer-review

Okagaki, T, Tanizawa, M, Fujinaga, M, Kunikiyo, T, Yuki, H, Ishikawa, K, Nishikawa, Y, Eimori, T, Inuishi, M & Oji, Y 2005, 'A novel mobility-variation-free extraction technique of capacitance coupling coefficient for stacked flash memory cell', Paper presented at ICMTS 2005 - 2005 IEEE International Conference on Microelectronic Test Structures, Leuven, Belgium, 05/4/4 - 05/4/7 pp. 219-222.

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abstract = "We propose a novel extraction technique of the control gate capacitance coupling coefficient(αg) for stacked gate flash memory cell. Five novel test patterns that the CBCM method is applied to, are developed to directly measure all the capacitances connected to the floating gate. Comparison of extracted αg with the TCAD result proves the validity of this technique. Moreover, we have confirmed that conventional techniques, which use the channel current characteristics, overestimate the αg variation due to channel mobility variation. Therefore direct αg extraction using our proposed technique is necessary for precise process monitoring.",

author = "T. Okagaki and M. Tanizawa and M. Fujinaga and T. Kunikiyo and H. Yuki and K. Ishikawa and Y. Nishikawa and T. Eimori and M. Inuishi and Y. Oji",

year = "2005",

month = nov,

day = "15",

language = "English",

pages = "219--222",

note = "ICMTS 2005 - 2005 IEEE International Conference on Microelectronic Test Structures ; Conference date: 04-04-2005 Through 07-04-2005",

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T1 - A novel mobility-variation-free extraction technique of capacitance coupling coefficient for stacked flash memory cell

AU - Okagaki, T.

AU - Tanizawa, M.

AU - Fujinaga, M.

AU - Kunikiyo, T.

AU - Yuki, H.

AU - Ishikawa, K.

AU - Nishikawa, Y.

AU - Eimori, T.

AU - Inuishi, M.

AU - Oji, Y.

PY - 2005/11/15

Y1 - 2005/11/15

N2 - We propose a novel extraction technique of the control gate capacitance coupling coefficient(αg) for stacked gate flash memory cell. Five novel test patterns that the CBCM method is applied to, are developed to directly measure all the capacitances connected to the floating gate. Comparison of extracted αg with the TCAD result proves the validity of this technique. Moreover, we have confirmed that conventional techniques, which use the channel current characteristics, overestimate the αg variation due to channel mobility variation. Therefore direct αg extraction using our proposed technique is necessary for precise process monitoring.

AB - We propose a novel extraction technique of the control gate capacitance coupling coefficient(αg) for stacked gate flash memory cell. Five novel test patterns that the CBCM method is applied to, are developed to directly measure all the capacitances connected to the floating gate. Comparison of extracted αg with the TCAD result proves the validity of this technique. Moreover, we have confirmed that conventional techniques, which use the channel current characteristics, overestimate the αg variation due to channel mobility variation. Therefore direct αg extraction using our proposed technique is necessary for precise process monitoring.

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T2 - ICMTS 2005 - 2005 IEEE International Conference on Microelectronic Test Structures

Y2 - 4 April 2005 through 7 April 2005

ER -

A novel mobility-variation-free extraction technique of capacitance coupling coefficient for stacked flash memory cell

Abstract

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ASJC Scopus subject areas

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