A PN junction-current model for advanced MOSFET technologies

Ryosuke Inagaki*, Norio Sadachika, Mitiko Miura-Mattausch, Yasuaki Inoue

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review


    A PN junction current model for advanced MOSFETs is proposed and implemented into HiSIM2, a complete surface-potentialbased MOSFET model. The model includes forward diode currents and reverse diode currents, and requires a total of 13 model parameters covering all bias conditions. Model simulation results reproduce measurements for different device geometries over a wide range of bias and temperature values.

    Original languageEnglish
    Pages (from-to)983-989
    Number of pages7
    JournalIEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences
    Issue number4
    Publication statusPublished - 2009


    • Diode current
    • HiSIM
    • PN junction current
    • Surface potential

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Computer Graphics and Computer-Aided Design
    • Applied Mathematics
    • Signal Processing


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