A retargeting methodology of nano-watt CMOS reference circuit based on advanced compact MOSFET model

Gong Chen; Bo Yang; Shigetoshi Nakatake; Zhangcai Huang; Yasuaki Inoue

doi:10.1109/ISCAS.2012.6272199

A retargeting methodology of nano-watt CMOS reference circuit based on advanced compact MOSFET model

Gong Chen^*, Bo Yang, Shigetoshi Nakatake, Zhangcai Huang, Yasuaki Inoue

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In retargeting of a nano-watt CMOS reference circuit, we adopt an advanced compact MOSFET model to describe the drain current consistently in strong and weak inversion levels. Based on this model, we describe all bias conditions in terms of ratios of the channel widths and lengths. Taking the effect of very long channels into account, we formulate the threshold voltage as a function of the drain-source voltage. Furthermore, we introduce a tuning parameter with the empirical range and fix all transistor sizes sweeping this parameter as well as applying a simulation. In case studies, we retargeted a circuit from the 180nm/1.8V process to the 90nm/1.2V, 2.5V, 3.3V processes. Besides, we fabricated the circuit in the 90nm/1.2V process, and confirmed the good measurement results such as less than 12.8%/V supply voltage variation and only 1.1nW power consumption.

Original language	English
Title of host publication	ISCAS 2012 - 2012 IEEE International Symposium on Circuits and Systems
Pages	938-941
Number of pages	4
DOIs	https://doi.org/10.1109/ISCAS.2012.6272199
Publication status	Published - 2012
Event	2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012 - Seoul Duration: 2012 May 20 → 2012 May 23

Other

Other	2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012
City	Seoul
Period	12/5/20 → 12/5/23

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/ISCAS.2012.6272199

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Chen, G, Yang, B, Nakatake, S, Huang, Z & Inoue, Y 2012, A retargeting methodology of nano-watt CMOS reference circuit based on advanced compact MOSFET model. in ISCAS 2012 - 2012 IEEE International Symposium on Circuits and Systems., 6272199, pp. 938-941, 2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012, Seoul, 12/5/20. https://doi.org/10.1109/ISCAS.2012.6272199

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abstract = "In retargeting of a nano-watt CMOS reference circuit, we adopt an advanced compact MOSFET model to describe the drain current consistently in strong and weak inversion levels. Based on this model, we describe all bias conditions in terms of ratios of the channel widths and lengths. Taking the effect of very long channels into account, we formulate the threshold voltage as a function of the drain-source voltage. Furthermore, we introduce a tuning parameter with the empirical range and fix all transistor sizes sweeping this parameter as well as applying a simulation. In case studies, we retargeted a circuit from the 180nm/1.8V process to the 90nm/1.2V, 2.5V, 3.3V processes. Besides, we fabricated the circuit in the 90nm/1.2V process, and confirmed the good measurement results such as less than 12.8%/V supply voltage variation and only 1.1nW power consumption.",

author = "Gong Chen and Bo Yang and Shigetoshi Nakatake and Zhangcai Huang and Yasuaki Inoue",

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doi = "10.1109/ISCAS.2012.6272199",

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AU - Inoue, Yasuaki

PY - 2012

Y1 - 2012

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AB - In retargeting of a nano-watt CMOS reference circuit, we adopt an advanced compact MOSFET model to describe the drain current consistently in strong and weak inversion levels. Based on this model, we describe all bias conditions in terms of ratios of the channel widths and lengths. Taking the effect of very long channels into account, we formulate the threshold voltage as a function of the drain-source voltage. Furthermore, we introduce a tuning parameter with the empirical range and fix all transistor sizes sweeping this parameter as well as applying a simulation. In case studies, we retargeted a circuit from the 180nm/1.8V process to the 90nm/1.2V, 2.5V, 3.3V processes. Besides, we fabricated the circuit in the 90nm/1.2V process, and confirmed the good measurement results such as less than 12.8%/V supply voltage variation and only 1.1nW power consumption.

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A retargeting methodology of nano-watt CMOS reference circuit based on advanced compact MOSFET model

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