A semiconductor optical amplifier comprising highly stacked InAs quantum dots fabricated using the strain-compensation technique

Kouichi Akahane; Naokatsu Yamamoto; Toshimasa Umezawa; Atsushi Kanno; Tetsuya Kawanishi

doi:10.7567/JJAP.53.04EG02

A semiconductor optical amplifier comprising highly stacked InAs quantum dots fabricated using the strain-compensation technique

Kouichi Akahane^*, Naokatsu Yamamoto, Toshimasa Umezawa, Atsushi Kanno, Tetsuya Kawanishi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

A semiconductor optical amplifier was fabricated by incorporating highly stacked InAs quantum dots (QDs) as a gain media. Twenty InAs QD layers were successfully stacked through the strain-compensation technique, without any deterioration of crystal quality. A wide-range 1.55μm band gain was observed, and maximum gain reached 25 dB at 1530nm when the input power was below %40 dBm.

Original language	English
Article number	04EG02
Journal	Japanese journal of applied physics
Volume	53
Issue number	4 SPEC. ISSUE
DOIs	https://doi.org/10.7567/JJAP.53.04EG02
Publication status	Published - 2014 Apr
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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@article{8f7d14102850400eb1de4646901cd5cd,

title = "A semiconductor optical amplifier comprising highly stacked InAs quantum dots fabricated using the strain-compensation technique",

abstract = "A semiconductor optical amplifier was fabricated by incorporating highly stacked InAs quantum dots (QDs) as a gain media. Twenty InAs QD layers were successfully stacked through the strain-compensation technique, without any deterioration of crystal quality. A wide-range 1.55μm band gain was observed, and maximum gain reached 25 dB at 1530nm when the input power was below %40 dBm.",

author = "Kouichi Akahane and Naokatsu Yamamoto and Toshimasa Umezawa and Atsushi Kanno and Tetsuya Kawanishi",

year = "2014",

month = apr,

doi = "10.7567/JJAP.53.04EG02",

language = "English",

volume = "53",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 SPEC. ISSUE",

}

TY - JOUR

T1 - A semiconductor optical amplifier comprising highly stacked InAs quantum dots fabricated using the strain-compensation technique

AU - Akahane, Kouichi

AU - Yamamoto, Naokatsu

AU - Umezawa, Toshimasa

AU - Kanno, Atsushi

AU - Kawanishi, Tetsuya

PY - 2014/4

Y1 - 2014/4

N2 - A semiconductor optical amplifier was fabricated by incorporating highly stacked InAs quantum dots (QDs) as a gain media. Twenty InAs QD layers were successfully stacked through the strain-compensation technique, without any deterioration of crystal quality. A wide-range 1.55μm band gain was observed, and maximum gain reached 25 dB at 1530nm when the input power was below %40 dBm.

AB - A semiconductor optical amplifier was fabricated by incorporating highly stacked InAs quantum dots (QDs) as a gain media. Twenty InAs QD layers were successfully stacked through the strain-compensation technique, without any deterioration of crystal quality. A wide-range 1.55μm band gain was observed, and maximum gain reached 25 dB at 1530nm when the input power was below %40 dBm.

UR - http://www.scopus.com/inward/record.url?scp=84903277327&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903277327&partnerID=8YFLogxK

U2 - 10.7567/JJAP.53.04EG02

DO - 10.7567/JJAP.53.04EG02

M3 - Article

AN - SCOPUS:84903277327

SN - 0021-4922

VL - 53

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 4 SPEC. ISSUE

M1 - 04EG02

ER -

A semiconductor optical amplifier comprising highly stacked InAs quantum dots fabricated using the strain-compensation technique

Abstract

ASJC Scopus subject areas

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