A simple and practical statistical device model for analog LSI designs

Jing Wang; Li Ding; Yasuaki Inoue

doi:10.1109/ICCCAS.2013.6765263

A simple and practical statistical device model for analog LSI designs

Jing Wang, Li Ding, Yasuaki Inoue

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

With the scaling of CMOS devices toward their ultimate dimensions, device performance variability induced by process variation has become a critical issue in analog LS I designs. Statistical device model library building based on statistical device model considering the process variation accurately is useful to predict the performance of analog LS I designs. However, conventional statistical device models are either complicated or not accurate enough. Therefore, a simple and practical statistical device model for analog LS I designs is proposed in this paper. Simultaneously, a simple method to extract model parameters is also proposed. Statistical analysis results of 0.65um CMOS Op-Amp based on the proposed model using Monte Carlo simulation have a good agreement with the chip measurement results.

Original language	English
Title of host publication	2013 International Conference on Communications, Circuits and Systems, ICCCAS 2013
Publisher	IEEE Computer Society
Pages	408-412
Number of pages	5
Volume	1
DOIs	https://doi.org/10.1109/ICCCAS.2013.6765263
Publication status	Published - 2013
Event	2013 International Conference on Communications, Circuits and Systems, ICCCAS 2013 - Chengdu Duration: 2013 Nov 15 → 2013 Nov 17

Other

Other	2013 International Conference on Communications, Circuits and Systems, ICCCAS 2013
City	Chengdu
Period	13/11/15 → 13/11/17

ASJC Scopus subject areas

Computer Networks and Communications
Hardware and Architecture

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10.1109/ICCCAS.2013.6765263

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Wang, J, Ding, L & Inoue, Y 2013, A simple and practical statistical device model for analog LSI designs. in 2013 International Conference on Communications, Circuits and Systems, ICCCAS 2013. vol. 1, 6765263, IEEE Computer Society, pp. 408-412, 2013 International Conference on Communications, Circuits and Systems, ICCCAS 2013, Chengdu, 13/11/15. https://doi.org/10.1109/ICCCAS.2013.6765263

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title = "A simple and practical statistical device model for analog LSI designs",

abstract = "With the scaling of CMOS devices toward their ultimate dimensions, device performance variability induced by process variation has become a critical issue in analog LS I designs. Statistical device model library building based on statistical device model considering the process variation accurately is useful to predict the performance of analog LS I designs. However, conventional statistical device models are either complicated or not accurate enough. Therefore, a simple and practical statistical device model for analog LS I designs is proposed in this paper. Simultaneously, a simple method to extract model parameters is also proposed. Statistical analysis results of 0.65um CMOS Op-Amp based on the proposed model using Monte Carlo simulation have a good agreement with the chip measurement results.",

author = "Jing Wang and Li Ding and Yasuaki Inoue",

year = "2013",

doi = "10.1109/ICCCAS.2013.6765263",

language = "English",

volume = "1",

pages = "408--412",

booktitle = "2013 International Conference on Communications, Circuits and Systems, ICCCAS 2013",

publisher = "IEEE Computer Society",

note = "2013 International Conference on Communications, Circuits and Systems, ICCCAS 2013 ; Conference date: 15-11-2013 Through 17-11-2013",

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AU - Ding, Li

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AB - With the scaling of CMOS devices toward their ultimate dimensions, device performance variability induced by process variation has become a critical issue in analog LS I designs. Statistical device model library building based on statistical device model considering the process variation accurately is useful to predict the performance of analog LS I designs. However, conventional statistical device models are either complicated or not accurate enough. Therefore, a simple and practical statistical device model for analog LS I designs is proposed in this paper. Simultaneously, a simple method to extract model parameters is also proposed. Statistical analysis results of 0.65um CMOS Op-Amp based on the proposed model using Monte Carlo simulation have a good agreement with the chip measurement results.

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BT - 2013 International Conference on Communications, Circuits and Systems, ICCCAS 2013

PB - IEEE Computer Society

T2 - 2013 International Conference on Communications, Circuits and Systems, ICCCAS 2013

Y2 - 15 November 2013 through 17 November 2013

ER -

A simple and practical statistical device model for analog LSI designs

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