A sub-1-V low-voltage low-power voltage referencewith a back-gate connection MOSFET

Jun Pan; Yasuaki Inoue

doi:10.1109/ICCCAS.2006.285140

A sub-1-V low-voltage low-power voltage referencewith a back-gate connection MOSFET

Jun Pan^*, Yasuaki Inoue

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

A sub-1-V self-biased low-voltage low-power voltage reference is presented for micropower electronic applications. And the proposed circuit has very low temperature dependence by using a back-gate connection MOSFET. An Hspice simulation shows that the reference voltage and total power dissipation are 181 mV and 1.1 μW, respectively. The temperature coefficient of the reference voltage is 33 ppm/°C within a temperature range from -40 to 100°C. The supply voltage dependence is -0.36 m V/V (Vdd=0.95-3.3 V). Supply voltage can be as low as 0.95 V in a standard CMOS 0.35 °m technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively.

Original language	English
Title of host publication	2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings
Pages	2314-2318
Number of pages	5
Volume	4
DOIs	https://doi.org/10.1109/ICCCAS.2006.285140
Publication status	Published - 2006
Event	2006 International Conference on Communications, Circuits and Systems, ICCCAS - Guilin Duration: 2006 Jun 25 → 2006 Jun 28

Other

Other	2006 International Conference on Communications, Circuits and Systems, ICCCAS
City	Guilin
Period	06/6/25 → 06/6/28

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/ICCCAS.2006.285140

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Pan, J & Inoue, Y 2006, A sub-1-V low-voltage low-power voltage referencewith a back-gate connection MOSFET. in 2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings. vol. 4, 4064387, pp. 2314-2318, 2006 International Conference on Communications, Circuits and Systems, ICCCAS, Guilin, 06/6/25. https://doi.org/10.1109/ICCCAS.2006.285140

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abstract = "A sub-1-V self-biased low-voltage low-power voltage reference is presented for micropower electronic applications. And the proposed circuit has very low temperature dependence by using a back-gate connection MOSFET. An Hspice simulation shows that the reference voltage and total power dissipation are 181 mV and 1.1 μW, respectively. The temperature coefficient of the reference voltage is 33 ppm/°C within a temperature range from -40 to 100°C. The supply voltage dependence is -0.36 m V/V (Vdd=0.95-3.3 V). Supply voltage can be as low as 0.95 V in a standard CMOS 0.35 °m technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively.",

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AB - A sub-1-V self-biased low-voltage low-power voltage reference is presented for micropower electronic applications. And the proposed circuit has very low temperature dependence by using a back-gate connection MOSFET. An Hspice simulation shows that the reference voltage and total power dissipation are 181 mV and 1.1 μW, respectively. The temperature coefficient of the reference voltage is 33 ppm/°C within a temperature range from -40 to 100°C. The supply voltage dependence is -0.36 m V/V (Vdd=0.95-3.3 V). Supply voltage can be as low as 0.95 V in a standard CMOS 0.35 °m technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively.

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A sub-1-V low-voltage low-power voltage referencewith a back-gate connection MOSFET

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