A Ta2O5 solid-electrolyte switch with improved reliability

Toshitsugu Sakamoto; Naoki Banno; Noriyuki Iguchi; Hisao Kawaura; Hiroshi Sunamura; Shinji Fujieda; Kazuya Terabe; Tsuyoshi Hasegawa; Masakazu Aono

doi:10.1109/VLSIT.2007.4339718

A Ta₂O₅ solid-electrolyte switch with improved reliability

Toshitsugu Sakamoto^*, Naoki Banno, Noriyuki Iguchi, Hisao Kawaura, Hiroshi Sunamura, Shinji Fujieda, Kazuya Terabe, Tsuyoshi Hasegawa, Masakazu Aono

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

72 Citations (Scopus)

Abstract

We present a novel solid-electrolyte switch ("NanoBridge") promising for application to field programmable gate array (FPGA). We replace a former solid electrolyte of CU₂S with Ta₂O₅, which has a Siprocess compatibility, . As a result, we successfully control the turn-on voltage to adapt to CMOS operation. The Ta₂O ₅-NanoBridge exhibits a high reliability of cycling endurance (> 10⁴) and a stability against EM (> 10years at 2.6mA at RT). Furthermore, we demonstrate that the conducting path of the switch is a Cu precipitate with 30nm in diameter, which possibly enables to scale down the switch.

Original language	English
Article number	4339718
Pages (from-to)	38-39
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
DOIs	https://doi.org/10.1109/VLSIT.2007.4339718
Publication status	Published - 2007
Externally published	Yes
Event	2007 Symposium on VLSI Technology, VLSIT 2007 - Kyoto, Japan Duration: 2007 Jun 12 → 2007 Jun 14

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/VLSIT.2007.4339718

Cite this

@article{c2e914a856914e9ba7571a39120b884e,

title = "A Ta2O5 solid-electrolyte switch with improved reliability",

abstract = "We present a novel solid-electrolyte switch ({"}NanoBridge{"}) promising for application to field programmable gate array (FPGA). We replace a former solid electrolyte of CU2S with Ta2O5, which has a Siprocess compatibility, . As a result, we successfully control the turn-on voltage to adapt to CMOS operation. The Ta2O 5-NanoBridge exhibits a high reliability of cycling endurance (> 104) and a stability against EM (> 10years at 2.6mA at RT). Furthermore, we demonstrate that the conducting path of the switch is a Cu precipitate with 30nm in diameter, which possibly enables to scale down the switch.",

author = "Toshitsugu Sakamoto and Naoki Banno and Noriyuki Iguchi and Hisao Kawaura and Hiroshi Sunamura and Shinji Fujieda and Kazuya Terabe and Tsuyoshi Hasegawa and Masakazu Aono",

year = "2007",

doi = "10.1109/VLSIT.2007.4339718",

language = "English",

pages = "38--39",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2007 Symposium on VLSI Technology, VLSIT 2007 ; Conference date: 12-06-2007 Through 14-06-2007",

}

TY - JOUR

T1 - A Ta2O5 solid-electrolyte switch with improved reliability

AU - Sakamoto, Toshitsugu

AU - Banno, Naoki

AU - Iguchi, Noriyuki

AU - Kawaura, Hisao

AU - Sunamura, Hiroshi

AU - Fujieda, Shinji

AU - Terabe, Kazuya

AU - Hasegawa, Tsuyoshi

AU - Aono, Masakazu

PY - 2007

Y1 - 2007

N2 - We present a novel solid-electrolyte switch ("NanoBridge") promising for application to field programmable gate array (FPGA). We replace a former solid electrolyte of CU2S with Ta2O5, which has a Siprocess compatibility, . As a result, we successfully control the turn-on voltage to adapt to CMOS operation. The Ta2O 5-NanoBridge exhibits a high reliability of cycling endurance (> 104) and a stability against EM (> 10years at 2.6mA at RT). Furthermore, we demonstrate that the conducting path of the switch is a Cu precipitate with 30nm in diameter, which possibly enables to scale down the switch.

AB - We present a novel solid-electrolyte switch ("NanoBridge") promising for application to field programmable gate array (FPGA). We replace a former solid electrolyte of CU2S with Ta2O5, which has a Siprocess compatibility, . As a result, we successfully control the turn-on voltage to adapt to CMOS operation. The Ta2O 5-NanoBridge exhibits a high reliability of cycling endurance (> 104) and a stability against EM (> 10years at 2.6mA at RT). Furthermore, we demonstrate that the conducting path of the switch is a Cu precipitate with 30nm in diameter, which possibly enables to scale down the switch.

UR - http://www.scopus.com/inward/record.url?scp=47249166433&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=47249166433&partnerID=8YFLogxK

U2 - 10.1109/VLSIT.2007.4339718

DO - 10.1109/VLSIT.2007.4339718

M3 - Conference article

AN - SCOPUS:47249166433

SN - 0743-1562

SP - 38

EP - 39

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

M1 - 4339718

T2 - 2007 Symposium on VLSI Technology, VLSIT 2007

Y2 - 12 June 2007 through 14 June 2007

ER -

A Ta₂O₅ solid-electrolyte switch with improved reliability

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this