Activation of a particulate Ta                         3                         N                         5                          water-oxidation photoanode with a GaN hole-blocking layer

Yusuke Asakura; Tomohiro Higashi; Hiroshi Nishiyama; Hiroyuki Kobayashi; Mamiko Nakabayashi; Naoya Shibata; Tsutomu Minegishi; Takashi Hisatomi; Masao Katayama; Taro Yamada; Kazunari Domen

doi:10.1039/c7se00402h

Activation of a particulate Ta ₃ N ₅ water-oxidation photoanode with a GaN hole-blocking layer

Yusuke Asakura, Tomohiro Higashi, Hiroshi Nishiyama, Hiroyuki Kobayashi, Mamiko Nakabayashi, Naoya Shibata, Tsutomu Minegishi, Takashi Hisatomi, Masao Katayama, Taro Yamada, Kazunari Domen^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Particulate Ta ₃ N ₅ , a material that responds to visible light for photoelectrochemical O ₂ evolution, was glued to a metallic GaN conducting layer. The electrode was able to oxidize water with 1.8-fold higher efficiency than that without GaN. The GaN layer blocked the hole current from Ta ₃ N ₅ to the back-contact metal layer and prevented hole-electron recombination.

Original language	English
Pages (from-to)	73-78
Number of pages	6
Journal	Sustainable Energy and Fuels
Volume	2
Issue number	1
DOIs	https://doi.org/10.1039/c7se00402h
Publication status	Published - 2018
Externally published	Yes

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Fuel Technology
Energy Engineering and Power Technology

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10.1039/c7se00402h

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Asakura, Y., Higashi, T., Nishiyama, H., Kobayashi, H., Nakabayashi, M., Shibata, N., Minegishi, T., Hisatomi, T., Katayama, M., Yamada, T., & Domen, K. (2018). Activation of a particulate Ta ₃ N ₅ water-oxidation photoanode with a GaN hole-blocking layer Sustainable Energy and Fuels, 2(1), 73-78. https://doi.org/10.1039/c7se00402h

Activation of a particulate Ta ₃ N ₅ water-oxidation photoanode with a GaN hole-blocking layer . / Asakura, Yusuke; Higashi, Tomohiro; Nishiyama, Hiroshi et al.
In: Sustainable Energy and Fuels, Vol. 2, No. 1, 2018, p. 73-78.

Research output: Contribution to journal › Article › peer-review

Asakura, Y, Higashi, T, Nishiyama, H, Kobayashi, H, Nakabayashi, M, Shibata, N, Minegishi, T, Hisatomi, T, Katayama, M, Yamada, T & Domen, K 2018, ' Activation of a particulate Ta ₃ N ₅ water-oxidation photoanode with a GaN hole-blocking layer ', Sustainable Energy and Fuels, vol. 2, no. 1, pp. 73-78. https://doi.org/10.1039/c7se00402h

Asakura Y, Higashi T, Nishiyama H, Kobayashi H, Nakabayashi M, Shibata N et al. Activation of a particulate Ta ₃ N ₅ water-oxidation photoanode with a GaN hole-blocking layer Sustainable Energy and Fuels. 2018;2(1):73-78. doi: 10.1039/c7se00402h

@article{80ec01699d414fe2a9227a3000041f22,

title = " Activation of a particulate Ta 3 N 5 water-oxidation photoanode with a GaN hole-blocking layer ",

abstract = " Particulate Ta 3 N 5 , a material that responds to visible light for photoelectrochemical O 2 evolution, was glued to a metallic GaN conducting layer. The electrode was able to oxidize water with 1.8-fold higher efficiency than that without GaN. The GaN layer blocked the hole current from Ta 3 N 5 to the back-contact metal layer and prevented hole-electron recombination.",

author = "Yusuke Asakura and Tomohiro Higashi and Hiroshi Nishiyama and Hiroyuki Kobayashi and Mamiko Nakabayashi and Naoya Shibata and Tsutomu Minegishi and Takashi Hisatomi and Masao Katayama and Taro Yamada and Kazunari Domen",

note = "Publisher Copyright: {\textcopyright} 2018 The Royal Society of Chemistry.",

year = "2018",

doi = "10.1039/c7se00402h",

language = "English",

volume = "2",

pages = "73--78",

journal = "Sustainable Energy and Fuels",

issn = "2398-4902",

publisher = "Royal Society of Chemistry",

number = "1",

}

TY - JOUR

T1 - Activation of a particulate Ta 3 N 5 water-oxidation photoanode with a GaN hole-blocking layer

AU - Asakura, Yusuke

AU - Higashi, Tomohiro

AU - Nishiyama, Hiroshi

AU - Kobayashi, Hiroyuki

AU - Nakabayashi, Mamiko

AU - Shibata, Naoya

AU - Minegishi, Tsutomu

AU - Hisatomi, Takashi

AU - Katayama, Masao

AU - Yamada, Taro

AU - Domen, Kazunari

PY - 2018

Y1 - 2018

N2 - Particulate Ta 3 N 5 , a material that responds to visible light for photoelectrochemical O 2 evolution, was glued to a metallic GaN conducting layer. The electrode was able to oxidize water with 1.8-fold higher efficiency than that without GaN. The GaN layer blocked the hole current from Ta 3 N 5 to the back-contact metal layer and prevented hole-electron recombination.

AB - Particulate Ta 3 N 5 , a material that responds to visible light for photoelectrochemical O 2 evolution, was glued to a metallic GaN conducting layer. The electrode was able to oxidize water with 1.8-fold higher efficiency than that without GaN. The GaN layer blocked the hole current from Ta 3 N 5 to the back-contact metal layer and prevented hole-electron recombination.

UR - http://www.scopus.com/inward/record.url?scp=85051244231&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85051244231&partnerID=8YFLogxK

U2 - 10.1039/c7se00402h

DO - 10.1039/c7se00402h

M3 - Article

AN - SCOPUS:85051244231

SN - 2398-4902

VL - 2

SP - 73

EP - 78

JO - Sustainable Energy and Fuels

JF - Sustainable Energy and Fuels

IS - 1

ER -

Activation of a particulate Ta ₃ N ₅ water-oxidation photoanode with a GaN hole-blocking layer

Abstract

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