Activation properties of Schottky CdTe diodes irradiated by 150 MeV protons

Mio M. Murakami; Yoshihito Kobayashi; Motohide Kokubun; Isao Takahashi; Yuu Okada; Madoka Kawaharada; Kazuhiro Nakazawa; Shin Walanabe; Goro Sato; Manabu Kouda; Takefumi Mitani; Tadayuki Takahashi; Masaya Suzuki; Makoto Tashiro; Kazuo Makishima

Activation properties of Schottky CdTe diodes irradiated by 150 MeV protons

Mio M. Murakami^*, Yoshihito Kobayashi, Motohide Kokubun, Isao Takahashi, Yuu Okada, Madoka Kawaharada, Kazuhiro Nakazawa, Shin Walanabe, Goro Sato, Manabu Kouda, Takefumi Mitani, Tadayuki Takahashi, Masaya Suzuki, Makoto Tashiro, Kazuo Makishima

^*Corresponding author for this work

Waseda Research Institute for Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

With its high stopping power, Cadmium Telluride (CdTe) has been regarded as a promising semiconductor material for the next generation X/γ-ray detectors, and unproved significantly during this decade. In order to apply this device to astrophysics, it is essential to investigate the radiation hardness and background properties induced by cosmic-ray protons. We irradiated Scbottky CdTe diodes and a CdTe block with a beam of mono-energetic (150 MeV) protons. The induced radio-activation in CdTe was measured externally with a germanium detector, and internally with the irradiated CdTe diode itself. We successfully identified most of radioactive isotopes induced mainly via (p, xn) reactions, and confirmed that activation background level of the CdTe diode is sufficiently low in orbit. We compared energy resolution and leakage current before and after the irradiation, and also monitored the signals from a calibration source during the irradiation. There have been no significant degradation. CdTe diodes are enough tolerant to radioactivity in orbit.

Original language	English
Title of host publication	IEEE Nuclear Science Symposium and Medical Imaging Conference
Editors	S. Metzler
Pages	269-273
Number of pages	5
Volume	1
Publication status	Published - 2002
Event	2002 IEEE Nuclear Science Symposium Conference Record - Norfolk, VA Duration: 2002 Nov 10 → 2002 Nov 16

Other

Other	2002 IEEE Nuclear Science Symposium Conference Record
City	Norfolk, VA
Period	02/11/10 → 02/11/16

Keywords

Activation
CdTe
Proton
Radiation damage

ASJC Scopus subject areas

Computer Vision and Pattern Recognition
Industrial and Manufacturing Engineering

Cite this

Murakami, M. M., Kobayashi, Y., Kokubun, M., Takahashi, I., Okada, Y., Kawaharada, M., Nakazawa, K., Walanabe, S., Sato, G., Kouda, M., Mitani, T., Takahashi, T., Suzuki, M., Tashiro, M., & Makishima, K. (2002). Activation properties of Schottky CdTe diodes irradiated by 150 MeV protons. In S. Metzler (Ed.), IEEE Nuclear Science Symposium and Medical Imaging Conference (Vol. 1, pp. 269-273)

Murakami, MM, Kobayashi, Y, Kokubun, M, Takahashi, I, Okada, Y, Kawaharada, M, Nakazawa, K, Walanabe, S, Sato, G, Kouda, M, Mitani, T, Takahashi, T, Suzuki, M, Tashiro, M & Makishima, K 2002, Activation properties of Schottky CdTe diodes irradiated by 150 MeV protons. in S Metzler (ed.), IEEE Nuclear Science Symposium and Medical Imaging Conference. vol. 1, pp. 269-273, 2002 IEEE Nuclear Science Symposium Conference Record, Norfolk, VA, 02/11/10.

@inproceedings{1acf7e7b277c4d738a24317b0ece0bef,

title = "Activation properties of Schottky CdTe diodes irradiated by 150 MeV protons",

abstract = "With its high stopping power, Cadmium Telluride (CdTe) has been regarded as a promising semiconductor material for the next generation X/γ-ray detectors, and unproved significantly during this decade. In order to apply this device to astrophysics, it is essential to investigate the radiation hardness and background properties induced by cosmic-ray protons. We irradiated Scbottky CdTe diodes and a CdTe block with a beam of mono-energetic (150 MeV) protons. The induced radio-activation in CdTe was measured externally with a germanium detector, and internally with the irradiated CdTe diode itself. We successfully identified most of radioactive isotopes induced mainly via (p, xn) reactions, and confirmed that activation background level of the CdTe diode is sufficiently low in orbit. We compared energy resolution and leakage current before and after the irradiation, and also monitored the signals from a calibration source during the irradiation. There have been no significant degradation. CdTe diodes are enough tolerant to radioactivity in orbit.",

keywords = "Activation, CdTe, Proton, Radiation damage",

author = "Murakami, {Mio M.} and Yoshihito Kobayashi and Motohide Kokubun and Isao Takahashi and Yuu Okada and Madoka Kawaharada and Kazuhiro Nakazawa and Shin Walanabe and Goro Sato and Manabu Kouda and Takefumi Mitani and Tadayuki Takahashi and Masaya Suzuki and Makoto Tashiro and Kazuo Makishima",

year = "2002",

language = "English",

volume = "1",

pages = "269--273",

editor = "S. Metzler",

booktitle = "IEEE Nuclear Science Symposium and Medical Imaging Conference",

note = "2002 IEEE Nuclear Science Symposium Conference Record ; Conference date: 10-11-2002 Through 16-11-2002",

}

TY - GEN

T1 - Activation properties of Schottky CdTe diodes irradiated by 150 MeV protons

AU - Murakami, Mio M.

AU - Kobayashi, Yoshihito

AU - Kokubun, Motohide

AU - Takahashi, Isao

AU - Okada, Yuu

AU - Kawaharada, Madoka

AU - Nakazawa, Kazuhiro

AU - Walanabe, Shin

AU - Sato, Goro

AU - Kouda, Manabu

AU - Mitani, Takefumi

AU - Takahashi, Tadayuki

AU - Suzuki, Masaya

AU - Tashiro, Makoto

AU - Makishima, Kazuo

PY - 2002

Y1 - 2002

N2 - With its high stopping power, Cadmium Telluride (CdTe) has been regarded as a promising semiconductor material for the next generation X/γ-ray detectors, and unproved significantly during this decade. In order to apply this device to astrophysics, it is essential to investigate the radiation hardness and background properties induced by cosmic-ray protons. We irradiated Scbottky CdTe diodes and a CdTe block with a beam of mono-energetic (150 MeV) protons. The induced radio-activation in CdTe was measured externally with a germanium detector, and internally with the irradiated CdTe diode itself. We successfully identified most of radioactive isotopes induced mainly via (p, xn) reactions, and confirmed that activation background level of the CdTe diode is sufficiently low in orbit. We compared energy resolution and leakage current before and after the irradiation, and also monitored the signals from a calibration source during the irradiation. There have been no significant degradation. CdTe diodes are enough tolerant to radioactivity in orbit.

AB - With its high stopping power, Cadmium Telluride (CdTe) has been regarded as a promising semiconductor material for the next generation X/γ-ray detectors, and unproved significantly during this decade. In order to apply this device to astrophysics, it is essential to investigate the radiation hardness and background properties induced by cosmic-ray protons. We irradiated Scbottky CdTe diodes and a CdTe block with a beam of mono-energetic (150 MeV) protons. The induced radio-activation in CdTe was measured externally with a germanium detector, and internally with the irradiated CdTe diode itself. We successfully identified most of radioactive isotopes induced mainly via (p, xn) reactions, and confirmed that activation background level of the CdTe diode is sufficiently low in orbit. We compared energy resolution and leakage current before and after the irradiation, and also monitored the signals from a calibration source during the irradiation. There have been no significant degradation. CdTe diodes are enough tolerant to radioactivity in orbit.

KW - Activation

KW - CdTe

KW - Proton

KW - Radiation damage

UR - http://www.scopus.com/inward/record.url?scp=0142241300&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0142241300&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0142241300

VL - 1

SP - 269

EP - 273

BT - IEEE Nuclear Science Symposium and Medical Imaging Conference

A2 - Metzler, S.

T2 - 2002 IEEE Nuclear Science Symposium Conference Record

Y2 - 10 November 2002 through 16 November 2002

ER -

Activation properties of Schottky CdTe diodes irradiated by 150 MeV protons

Abstract

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Keywords

ASJC Scopus subject areas

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