Activation properties of schottky CdTe diodes irradiated by 150 MeV protons

Mio M. Murakami*, Yoshihito Kobayashi, Motohide Kokubun, Isao Takahashi, Yuu Okada, Madoka Kawaharada, Kazuhiro Nakazawa, Shin Watanabe, Goro Sato, Manabu Kouda, Takefumi Mitani, Tadayuki Takahashi, Masaya Suzuki, Makoto Tashiro, Satoshi Kawasoe, Masaharu Nomachi, Kazuo Makishima

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    20 Citations (Scopus)


    Cadmium Telluride (CdTe), with its high photon absorption efficiency, has been regarded as a promising semiconductor material for the next generation X/γ-ray detectors. In order to apply this device to astrophysics, it is essential to investigate the radiation hardness and background properties induced by cosmic-ray protons in orbit. We irradiated Schottky CdTe diodes and a CdTe block with a beam of mono-energetic (150 MeV) protons. The induced activation in CdTe was measured externally with a germanium detector, and internally with the irradiated CdTe diode itself. We successfully identified most of radioactive isotopes induced mainly via (p, xn) reactions, and confirmed that the activation background level of CdTe diode is sufficiently low in orbit. We compared energy resolution and leakage current before and after the irradiation and also monitored the signals from a calibration source during the irradiation. There have been no significant degradation. CdTe diodes are tolerant enough to radioactivity in low earth orbit.

    Original languageEnglish
    Pages (from-to)1013-1019
    Number of pages7
    JournalIEEE Transactions on Nuclear Science
    Issue number4 II
    Publication statusPublished - 2003 Aug


    • Activation
    • CdTe
    • Proton
    • Radiation damage

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Nuclear Energy and Engineering


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