Adsorption and thermal or photodecomposition of triethylgallium and trimethylgallium on si(Lll)-7 x7

Ken Ichi Fukui; Wataru Mizutani; Hiroshi Onishi; Shingo Ichimura; Hazime Shimizu; Yasuhiro Iwasawa

doi:10.1143/JJAP.34.4910

Adsorption and thermal or photodecomposition of triethylgallium and trimethylgallium on si(Lll)-7 x7

Ken Ichi Fukui, Wataru Mizutani, Hiroshi Onishi, Shingo Ichimura, Hazime Shimizu, Yasuhiro Iwasawa

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Adsorption and thermal or photodecomposition of triethylgallium (TEG) and trimethylgallium (TMG) on Si(lll)-7x7 were investigated using a home-built scanning tunneling microscope (STM), Auger electron spectroscopy (AES), and thermal desorption spectroscopy (TDS). Adsorption of TEG and TMG at room temperature gave bright protrusions of GatoHs^ia) and Ga(CH3)a;(a) (x = 2, 3) on atop sites of Si adatoms with a slight preference for center adatoms over comer ones. The Ga(C2Hs)_x(a) and Ga(CH3)_x(a) species were decomposed by UV irradiation probably due to absorption of UV photons by these adsorbates. Thermal decomposition of TEG on the 7x7 surface led to severe carbon deposition, particularly at low initial coverage of TEG, in contrast to the result reported on Si(l00)-2 x 1.

Original language	English
Pages (from-to)	4910-4916
Number of pages	7
Journal	Japanese journal of applied physics
Volume	34
Issue number	9R
DOIs	https://doi.org/10.1143/JJAP.34.4910
Publication status	Published - 1995 Sept
Externally published	Yes

Keywords

AES
Adsorption
Photodecomposition
STM
Si(111)
TDS
Thermal decomposition
Triethylgallium
Trimethylgallium

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.34.4910

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title = "Adsorption and thermal or photodecomposition of triethylgallium and trimethylgallium on si(Lll)-7 x7",

abstract = "Adsorption and thermal or photodecomposition of triethylgallium (TEG) and trimethylgallium (TMG) on Si(lll)-7x7 were investigated using a home-built scanning tunneling microscope (STM), Auger electron spectroscopy (AES), and thermal desorption spectroscopy (TDS). Adsorption of TEG and TMG at room temperature gave bright protrusions of GatoHs^ia) and Ga(CH3)a;(a) (x = 2, 3) on atop sites of Si adatoms with a slight preference for center adatoms over comer ones. The Ga(C2Hs)x(a) and Ga(CH3)x(a) species were decomposed by UV irradiation probably due to absorption of UV photons by these adsorbates. Thermal decomposition of TEG on the 7x7 surface led to severe carbon deposition, particularly at low initial coverage of TEG, in contrast to the result reported on Si(l00)-2 x 1.",

keywords = "AES, Adsorption, Photodecomposition, STM, Si(111), TDS, Thermal decomposition, Triethylgallium, Trimethylgallium",

author = "Fukui, {Ken Ichi} and Wataru Mizutani and Hiroshi Onishi and Shingo Ichimura and Hazime Shimizu and Yasuhiro Iwasawa",

year = "1995",

month = sep,

doi = "10.1143/JJAP.34.4910",

language = "English",

volume = "34",

pages = "4910--4916",

journal = "Japanese journal of applied physics",

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publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Adsorption and thermal or photodecomposition of triethylgallium and trimethylgallium on si(Lll)-7 x7

AU - Fukui, Ken Ichi

AU - Mizutani, Wataru

AU - Onishi, Hiroshi

AU - Ichimura, Shingo

AU - Shimizu, Hazime

AU - Iwasawa, Yasuhiro

PY - 1995/9

Y1 - 1995/9

N2 - Adsorption and thermal or photodecomposition of triethylgallium (TEG) and trimethylgallium (TMG) on Si(lll)-7x7 were investigated using a home-built scanning tunneling microscope (STM), Auger electron spectroscopy (AES), and thermal desorption spectroscopy (TDS). Adsorption of TEG and TMG at room temperature gave bright protrusions of GatoHs^ia) and Ga(CH3)a;(a) (x = 2, 3) on atop sites of Si adatoms with a slight preference for center adatoms over comer ones. The Ga(C2Hs)x(a) and Ga(CH3)x(a) species were decomposed by UV irradiation probably due to absorption of UV photons by these adsorbates. Thermal decomposition of TEG on the 7x7 surface led to severe carbon deposition, particularly at low initial coverage of TEG, in contrast to the result reported on Si(l00)-2 x 1.

AB - Adsorption and thermal or photodecomposition of triethylgallium (TEG) and trimethylgallium (TMG) on Si(lll)-7x7 were investigated using a home-built scanning tunneling microscope (STM), Auger electron spectroscopy (AES), and thermal desorption spectroscopy (TDS). Adsorption of TEG and TMG at room temperature gave bright protrusions of GatoHs^ia) and Ga(CH3)a;(a) (x = 2, 3) on atop sites of Si adatoms with a slight preference for center adatoms over comer ones. The Ga(C2Hs)x(a) and Ga(CH3)x(a) species were decomposed by UV irradiation probably due to absorption of UV photons by these adsorbates. Thermal decomposition of TEG on the 7x7 surface led to severe carbon deposition, particularly at low initial coverage of TEG, in contrast to the result reported on Si(l00)-2 x 1.

KW - AES

KW - Adsorption

KW - Photodecomposition

KW - STM

KW - Si(111)

KW - TDS

KW - Thermal decomposition

KW - Triethylgallium

KW - Trimethylgallium

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U2 - 10.1143/JJAP.34.4910

DO - 10.1143/JJAP.34.4910

M3 - Article

AN - SCOPUS:0029368491

SN - 0021-4922

VL - 34

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EP - 4916

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 9R

ER -

Adsorption and thermal or photodecomposition of triethylgallium and trimethylgallium on si(Lll)-7 x7

Abstract

Keywords

ASJC Scopus subject areas

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