A novel shallow trench isolation (STI) technique named Poly-Si-Buffered-mask STI (PB-STI) using the SiN/poly-Si/SiO2 stacked mask has been proposed. Poly-Si is oxidized at the step of liner oxidation and then `small bird's beak' is grown. With small bird's beak formation the oxide recess at the trench edge is prevented and the fringing of electric-field from the gate electrode can be effectively avoided. PB-STI can completely suppress the inverse narrow channel effect with quite simple process sequence which includes no corner implantation.
|Number of pages
|Digest of Technical Papers - Symposium on VLSI Technology
|Published - 2000
|2000 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 2000 Jun 13 → 2000 Jun 15
ASJC Scopus subject areas
- Electrical and Electronic Engineering