TY - JOUR
T1 - Air-stable n-channel organic field-effect transistors based on N,N′-bis(4-trifluoromethylbenzyl)perylene-3,4,9,10-tetracarboxylic diimide
AU - Hosoi, Yoshinobu
AU - Tsunami, Daisuke
AU - Ishii, Hisao
AU - Furukawa, Yukio
N1 - Funding Information:
This work has been supported by a Grant-in-Aid for Young Scientists (B) (18750170) from JSPS and the 21COE ‘Practical Nano-Chemistry’ from MEXT.
PY - 2007/2/27
Y1 - 2007/2/27
N2 - Air-stable n-channel field-effect transistors based on thin films of the compound, N,N′-bis(4-trifluoromethylbenzyl)perylene-3,4,9,10-tetracarboxylic diimide (PTCDI-TFB), were fabricated, and the effects of surface treatment and substrate temperature at the film deposition on the electron mobility of the transistors were studied. The maximum mobility, 4.1 × 10-2 cm2 V-1 s-1 in the saturation region (1.7 × 10-2 cm2 V-1 s-1 in the linear region), was obtained in air for the film deposited at 95 °C on the SiO2 surface modified with hexamethyldisilazane. The high electron affinity of PTCDI-TFB estimated at 4.8 eV by photoelectron yield spectroscopy and UV-Vis absorption spectroscopy, which is ascribable to the trifluoromethylbenzyl groups, is likely to result in the observed stable transistor operation in air.
AB - Air-stable n-channel field-effect transistors based on thin films of the compound, N,N′-bis(4-trifluoromethylbenzyl)perylene-3,4,9,10-tetracarboxylic diimide (PTCDI-TFB), were fabricated, and the effects of surface treatment and substrate temperature at the film deposition on the electron mobility of the transistors were studied. The maximum mobility, 4.1 × 10-2 cm2 V-1 s-1 in the saturation region (1.7 × 10-2 cm2 V-1 s-1 in the linear region), was obtained in air for the film deposited at 95 °C on the SiO2 surface modified with hexamethyldisilazane. The high electron affinity of PTCDI-TFB estimated at 4.8 eV by photoelectron yield spectroscopy and UV-Vis absorption spectroscopy, which is ascribable to the trifluoromethylbenzyl groups, is likely to result in the observed stable transistor operation in air.
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U2 - 10.1016/j.cplett.2006.12.106
DO - 10.1016/j.cplett.2006.12.106
M3 - Article
AN - SCOPUS:33846782900
SN - 0009-2614
VL - 436
SP - 139
EP - 143
JO - Chemical Physics Letters
JF - Chemical Physics Letters
IS - 1-3
ER -