Alignment and switching behaviors of liquid crystal on a-Si Ox thin films deposited by a filtered cathodic arc process

P. J. Martin; A. Bendavid; C. Comte; H. Miyata; Y. Asao; Y. Ishida; A. Sakai

doi:10.1063/1.2768308

Alignment and switching behaviors of liquid crystal on a-Si Ox thin films deposited by a filtered cathodic arc process

P. J. Martin^*, A. Bendavid, C. Comte, H. Miyata, Y. Asao, Y. Ishida, A. Sakai

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

A new method is described for the preparation of silicon oxide layers, which produces vertical alignment of liquid crystal with controlled pretilt angles, by a reactive filtered cathodic arc deposition under oblique incidence geometry. The pretilt angle is dependent on the angle of deposition, but is not simply caused by the surface roughness. The achievable pretilt angle by this method is ∼5.5°, which allows uniform switching behavior under an applied electric field.

Original language	English
Article number	063516
Journal	Applied Physics Letters
Volume	91
Issue number	6
DOIs	https://doi.org/10.1063/1.2768308
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "A new method is described for the preparation of silicon oxide layers, which produces vertical alignment of liquid crystal with controlled pretilt angles, by a reactive filtered cathodic arc deposition under oblique incidence geometry. The pretilt angle is dependent on the angle of deposition, but is not simply caused by the surface roughness. The achievable pretilt angle by this method is ∼5.5°, which allows uniform switching behavior under an applied electric field.",

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AU - Martin, P. J.

AU - Bendavid, A.

AU - Comte, C.

AU - Miyata, H.

AU - Asao, Y.

AU - Ishida, Y.

AU - Sakai, A.

PY - 2007

Y1 - 2007

N2 - A new method is described for the preparation of silicon oxide layers, which produces vertical alignment of liquid crystal with controlled pretilt angles, by a reactive filtered cathodic arc deposition under oblique incidence geometry. The pretilt angle is dependent on the angle of deposition, but is not simply caused by the surface roughness. The achievable pretilt angle by this method is ∼5.5°, which allows uniform switching behavior under an applied electric field.

AB - A new method is described for the preparation of silicon oxide layers, which produces vertical alignment of liquid crystal with controlled pretilt angles, by a reactive filtered cathodic arc deposition under oblique incidence geometry. The pretilt angle is dependent on the angle of deposition, but is not simply caused by the surface roughness. The achievable pretilt angle by this method is ∼5.5°, which allows uniform switching behavior under an applied electric field.

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Alignment and switching behaviors of liquid crystal on a-Si Ox thin films deposited by a filtered cathodic arc process

Abstract

ASJC Scopus subject areas

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