All-optical memories based on photonic crystal nanocavities

A. Shinya; S. Matsuo; K. Nozaki; T. Tanabe; E. Kuramochi; T. Sato; T. Kakitsuka; M. Notomi

doi:10.1109/PS.2009.5307771

All-optical memories based on photonic crystal nanocavities

A. Shinya^*, S. Matsuo, K. Nozaki, T. Tanabe, E. Kuramochi, T. Sato, T. Kakitsuka, M. Notomi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We demonstrate all-optical bistable memory operation with InGaAsP photonic crystal nanocavities based on refractive index modulation caused by carrier-induced nonlinearity. The minimum bias power for bistability is extremely low at 40 μW and the operating energy required for switching is only 30 fJ.

Original language	English
Title of host publication	2009 International Conference on Photonics in Switching, PS '09
DOIs	https://doi.org/10.1109/PS.2009.5307771
Publication status	Published - 2009 Dec 1
Externally published	Yes
Event	2009 International Conference on Photonics in Switching, PS '09 - Pisa, Italy Duration: 2009 Sept 15 → 2009 Sept 19

Publication series

Name	2009 International Conference on Photonics in Switching, PS '09

Conference

Conference	2009 International Conference on Photonics in Switching, PS '09
Country/Territory	Italy
City	Pisa
Period	09/9/15 → 09/9/19

Keywords

Ingaasp
Nanocavity
Optical bit memory
Photonic crystal

ASJC Scopus subject areas

Computer Networks and Communications
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/PS.2009.5307771

Cite this

Shinya, A, Matsuo, S, Nozaki, K, Tanabe, T, Kuramochi, E, Sato, T, Kakitsuka, T & Notomi, M 2009, All-optical memories based on photonic crystal nanocavities. in 2009 International Conference on Photonics in Switching, PS '09., 5307771, 2009 International Conference on Photonics in Switching, PS '09, 2009 International Conference on Photonics in Switching, PS '09, Pisa, Italy, 09/9/15. https://doi.org/10.1109/PS.2009.5307771

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abstract = "We demonstrate all-optical bistable memory operation with InGaAsP photonic crystal nanocavities based on refractive index modulation caused by carrier-induced nonlinearity. The minimum bias power for bistability is extremely low at 40 μW and the operating energy required for switching is only 30 fJ.",

keywords = "Ingaasp, Nanocavity, Optical bit memory, Photonic crystal",

author = "A. Shinya and S. Matsuo and K. Nozaki and T. Tanabe and E. Kuramochi and T. Sato and T. Kakitsuka and M. Notomi",

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doi = "10.1109/PS.2009.5307771",

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AU - Shinya, A.

AU - Matsuo, S.

AU - Nozaki, K.

AU - Tanabe, T.

AU - Kuramochi, E.

AU - Sato, T.

AU - Kakitsuka, T.

AU - Notomi, M.

PY - 2009/12/1

Y1 - 2009/12/1

N2 - We demonstrate all-optical bistable memory operation with InGaAsP photonic crystal nanocavities based on refractive index modulation caused by carrier-induced nonlinearity. The minimum bias power for bistability is extremely low at 40 μW and the operating energy required for switching is only 30 fJ.

AB - We demonstrate all-optical bistable memory operation with InGaAsP photonic crystal nanocavities based on refractive index modulation caused by carrier-induced nonlinearity. The minimum bias power for bistability is extremely low at 40 μW and the operating energy required for switching is only 30 fJ.

KW - Ingaasp

KW - Nanocavity

KW - Optical bit memory

KW - Photonic crystal

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DO - 10.1109/PS.2009.5307771

M3 - Conference contribution

AN - SCOPUS:73649139969

SN - 9781424438563

T3 - 2009 International Conference on Photonics in Switching, PS '09

BT - 2009 International Conference on Photonics in Switching, PS '09

T2 - 2009 International Conference on Photonics in Switching, PS '09

Y2 - 15 September 2009 through 19 September 2009

ER -

All-optical memories based on photonic crystal nanocavities

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

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