All-optical on-chip bit memory based on ultra high Q InGaAsP photonic crystal

Akihiko Shinya; Shinji Matsuo; Yosia; Takasumi Tanabe; Eiichi Kuramochi; Tomonari Sato; Takaaki Kakitsuka; Masaya Notomi

doi:10.1364/OE.16.019382

All-optical on-chip bit memory based on ultra high Q InGaAsP photonic crystal

Akihiko Shinya^*, Shinji Matsuo, Yosia, Takasumi Tanabe, Eiichi Kuramochi, Tomonari Sato, Takaaki Kakitsuka, Masaya Notomi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

85 Citations (Scopus)

Abstract

We demonstrate all-optical bit memory operation with photonic crystal (PhC) nanocavities based on an InGaAsP substrate with a band gap at a wavelength of about 1.3 μm. The optical bistability is based on a refractive index modulation caused by carrier-plasma dispersion. The operating energy required for switching is only 30 fJ, and the minimum optical bias power for bistability is 40 μW, which is about one hundred times less than that required for laser based bistable memories.

Original language	English
Pages (from-to)	19382-19387
Number of pages	6
Journal	Optics Express
Volume	16
Issue number	23
DOIs	https://doi.org/10.1364/OE.16.019382
Publication status	Published - 2008 Nov 10
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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abstract = "We demonstrate all-optical bit memory operation with photonic crystal (PhC) nanocavities based on an InGaAsP substrate with a band gap at a wavelength of about 1.3 μm. The optical bistability is based on a refractive index modulation caused by carrier-plasma dispersion. The operating energy required for switching is only 30 fJ, and the minimum optical bias power for bistability is 40 μW, which is about one hundred times less than that required for laser based bistable memories.",

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AU - Shinya, Akihiko

AU - Matsuo, Shinji

AU - Yosia,

AU - Tanabe, Takasumi

AU - Kuramochi, Eiichi

AU - Sato, Tomonari

AU - Kakitsuka, Takaaki

AU - Notomi, Masaya

PY - 2008/11/10

Y1 - 2008/11/10

N2 - We demonstrate all-optical bit memory operation with photonic crystal (PhC) nanocavities based on an InGaAsP substrate with a band gap at a wavelength of about 1.3 μm. The optical bistability is based on a refractive index modulation caused by carrier-plasma dispersion. The operating energy required for switching is only 30 fJ, and the minimum optical bias power for bistability is 40 μW, which is about one hundred times less than that required for laser based bistable memories.

AB - We demonstrate all-optical bit memory operation with photonic crystal (PhC) nanocavities based on an InGaAsP substrate with a band gap at a wavelength of about 1.3 μm. The optical bistability is based on a refractive index modulation caused by carrier-plasma dispersion. The operating energy required for switching is only 30 fJ, and the minimum optical bias power for bistability is 40 μW, which is about one hundred times less than that required for laser based bistable memories.

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All-optical on-chip bit memory based on ultra high Q InGaAsP photonic crystal

Abstract

ASJC Scopus subject areas

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