Ambipolar organic field-effect transistors based on rubrene single crystals

Tetsuo Takahashi; Taishi Takenobu; Jun Takeya; Yoshihiro Iwasa

doi:10.1063/1.2166698

Ambipolar organic field-effect transistors based on rubrene single crystals

Tetsuo Takahashi^*, Taishi Takenobu, Jun Takeya, Yoshihiro Iwasa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

161 Citations (Scopus)

Abstract

We herein report ambipolar organic field-effect transistors based on rubrene single crystals. The transistors operate in both the p - and n -channel regimes depending upon the bias conditions. Hole and electron mobilities of 1.8 and 1.1× 10-2 cm2 V s, respectively, were derived from saturated currents. The appearance of an electron enhancement mode in single crystals of wide-band-gap semiconductors (∼2.6 eV) is ascribed to the reduction of electron traps at the semiconductor-dielectric interface using a hydroxyl-free gate dielectric.

Original language	English
Article number	033505
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	88
Issue number	3
DOIs	https://doi.org/10.1063/1.2166698
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2166698

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@article{c0f91d1570eb4ed9b6a579d9122182be,

title = "Ambipolar organic field-effect transistors based on rubrene single crystals",

abstract = "We herein report ambipolar organic field-effect transistors based on rubrene single crystals. The transistors operate in both the p - and n -channel regimes depending upon the bias conditions. Hole and electron mobilities of 1.8 and 1.1× 10-2 cm2 V s, respectively, were derived from saturated currents. The appearance of an electron enhancement mode in single crystals of wide-band-gap semiconductors (∼2.6 eV) is ascribed to the reduction of electron traps at the semiconductor-dielectric interface using a hydroxyl-free gate dielectric.",

author = "Tetsuo Takahashi and Taishi Takenobu and Jun Takeya and Yoshihiro Iwasa",

year = "2006",

doi = "10.1063/1.2166698",

language = "English",

volume = "88",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - Ambipolar organic field-effect transistors based on rubrene single crystals

AU - Takahashi, Tetsuo

AU - Takenobu, Taishi

AU - Takeya, Jun

AU - Iwasa, Yoshihiro

PY - 2006

Y1 - 2006

N2 - We herein report ambipolar organic field-effect transistors based on rubrene single crystals. The transistors operate in both the p - and n -channel regimes depending upon the bias conditions. Hole and electron mobilities of 1.8 and 1.1× 10-2 cm2 V s, respectively, were derived from saturated currents. The appearance of an electron enhancement mode in single crystals of wide-band-gap semiconductors (∼2.6 eV) is ascribed to the reduction of electron traps at the semiconductor-dielectric interface using a hydroxyl-free gate dielectric.

AB - We herein report ambipolar organic field-effect transistors based on rubrene single crystals. The transistors operate in both the p - and n -channel regimes depending upon the bias conditions. Hole and electron mobilities of 1.8 and 1.1× 10-2 cm2 V s, respectively, were derived from saturated currents. The appearance of an electron enhancement mode in single crystals of wide-band-gap semiconductors (∼2.6 eV) is ascribed to the reduction of electron traps at the semiconductor-dielectric interface using a hydroxyl-free gate dielectric.

UR - http://www.scopus.com/inward/record.url?scp=31144478404&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31144478404&partnerID=8YFLogxK

U2 - 10.1063/1.2166698

DO - 10.1063/1.2166698

M3 - Article

AN - SCOPUS:31144478404

SN - 0003-6951

VL - 88

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 033505

ER -

Ambipolar organic field-effect transistors based on rubrene single crystals

Abstract

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