An 18.5ns 128Mb SOI DRAM with a floating body cell

Takashi Ohsawa*, Katsuyuki Fujita, Kosuke Hatsuda, Tomoki Higashi, Mutsuo Morikado, Yoshihiro Minami, Tomoaki Shino, Hiroomi Nakajima, Kazumi Inoh, Takeshi Hamamoto, Shigeyoshi Watanabe

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

13 Citations (Scopus)
Original languageEnglish
Pages (from-to)458-459+609
JournalDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Publication statusPublished - 2005 Dec 6
Externally publishedYes
Event2005 IEEE International Solid-State Circuits Conference, ISSCC - San Francisco, CA, United States
Duration: 2005 Feb 62005 Feb 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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