An 18.5ns 128Mb SOI DRAM with a floating body cell

Takashi Ohsawa; Katsuyuki Fujita; Kosuke Hatsuda; Tomoki Higashi; Mutsuo Morikado; Yoshihiro Minami; Tomoaki Shino; Hiroomi Nakajima; Kazumi Inoh; Takeshi Hamamoto; Shigeyoshi Watanabe

An 18.5ns 128Mb SOI DRAM with a floating body cell

Takashi Ohsawa^*, Katsuyuki Fujita, Kosuke Hatsuda, Tomoki Higashi, Mutsuo Morikado, Yoshihiro Minami, Tomoaki Shino, Hiroomi Nakajima, Kazumi Inoh, Takeshi Hamamoto, Shigeyoshi Watanabe

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

13 Citations (Scopus)

Original language	English
Pages (from-to)	458-459+609
Journal	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume	48
Publication status	Published - 2005 Dec 6
Externally published	Yes
Event	2005 IEEE International Solid-State Circuits Conference, ISSCC - San Francisco, CA, United States Duration: 2005 Feb 6 → 2005 Feb 10

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{b741b4ca195542769c707c56183f6485,

title = "An 18.5ns 128Mb SOI DRAM with a floating body cell",

author = "Takashi Ohsawa and Katsuyuki Fujita and Kosuke Hatsuda and Tomoki Higashi and Mutsuo Morikado and Yoshihiro Minami and Tomoaki Shino and Hiroomi Nakajima and Kazumi Inoh and Takeshi Hamamoto and Shigeyoshi Watanabe",

year = "2005",

month = dec,

day = "6",

language = "English",

volume = "48",

pages = "458--459+609",

journal = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

issn = "0193-6530",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2005 IEEE International Solid-State Circuits Conference, ISSCC ; Conference date: 06-02-2005 Through 10-02-2005",

}

TY - JOUR

T1 - An 18.5ns 128Mb SOI DRAM with a floating body cell

AU - Ohsawa, Takashi

AU - Fujita, Katsuyuki

AU - Hatsuda, Kosuke

AU - Higashi, Tomoki

AU - Morikado, Mutsuo

AU - Minami, Yoshihiro

AU - Shino, Tomoaki

AU - Nakajima, Hiroomi

AU - Inoh, Kazumi

AU - Hamamoto, Takeshi

AU - Watanabe, Shigeyoshi

PY - 2005/12/6

Y1 - 2005/12/6

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UR - http://www.scopus.com/inward/citedby.url?scp=28144449075&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:28144449075

SN - 0193-6530

VL - 48

SP - 458-459+609

JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

JF - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

T2 - 2005 IEEE International Solid-State Circuits Conference, ISSCC

Y2 - 6 February 2005 through 10 February 2005

ER -

An 18.5ns 128Mb SOI DRAM with a floating body cell

ASJC Scopus subject areas

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Cite this