Abstract
A fluorine-terminated polycrystalline boron-doped diamond surface is successfully employed as a pH-insensitive SGFET (solution-gate field-effect transistor) for an all-solid-state pH sensor. The fluorinated polycrystalline boron-doped diamond (BDD) channel possesses a pH-insensitivity of less than 3mV/pH compared with a pH-sensitive oxygenated channel. With differential FET (field-effect transistor) sensing, a sensitivity of 27 mv/pH was obtained in the pH range of 2–10; therefore, it demonstrated excellent performance for an all-solid-state pH sensor with a pH-sensitive oxygen-terminated polycrystalline BDD SGFET and a platinum quasi-reference electrode, respectively.
Original language | English |
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Article number | 1040 |
Journal | Sensors (Switzerland) |
Volume | 17 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2017 May 5 |
Keywords
- All-solid-state pH sensor
- Electrolyte-solution-gate field-effect transistor
- Fluorine-termination
- PH-insensitivity
- Polycrystalline boron-doped diamond
ASJC Scopus subject areas
- Analytical Chemistry
- Biochemistry
- Atomic and Molecular Physics, and Optics
- Instrumentation
- Electrical and Electronic Engineering