An application of the dry liftoff method by molybdenum oxide sublimation to CMOS isolation

Noriyoshi Yamauchi

doi:10.1143/JJAP.25.1138

An application of the dry liftoff method by molybdenum oxide sublimation to CMOS isolation

Noriyoshi Yamauchi

Research output: Contribution to journal › Comment/debate › peer-review

2 Citations (Scopus)

Abstract

A CMOS isolation process using a dry liftoff is proposed in which a sputter-deposited SiO₂ film is delineated by removing the Mo pattern underneath the SiO₂ film making use of the sublimation of the molybdenum oxide. Test CMOS transistors were fabricated. No significant differences were observed in the characteristics of transistors fabricated by dry- and conventional wet-liftoff techniques.

Original language	English
Pages (from-to)	1138-1139
Number of pages	2
Journal	Japanese journal of applied physics
Volume	25
Issue number	7
DOIs	https://doi.org/10.1143/JJAP.25.1138
Publication status	Published - 1986 Jul
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.25.1138

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title = "An application of the dry liftoff method by molybdenum oxide sublimation to CMOS isolation",

abstract = "A CMOS isolation process using a dry liftoff is proposed in which a sputter-deposited SiO2 film is delineated by removing the Mo pattern underneath the SiO2 film making use of the sublimation of the molybdenum oxide. Test CMOS transistors were fabricated. No significant differences were observed in the characteristics of transistors fabricated by dry- and conventional wet-liftoff techniques.",

author = "Noriyoshi Yamauchi",

year = "1986",

month = jul,

doi = "10.1143/JJAP.25.1138",

language = "English",

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T1 - An application of the dry liftoff method by molybdenum oxide sublimation to CMOS isolation

AU - Yamauchi, Noriyoshi

PY - 1986/7

Y1 - 1986/7

N2 - A CMOS isolation process using a dry liftoff is proposed in which a sputter-deposited SiO2 film is delineated by removing the Mo pattern underneath the SiO2 film making use of the sublimation of the molybdenum oxide. Test CMOS transistors were fabricated. No significant differences were observed in the characteristics of transistors fabricated by dry- and conventional wet-liftoff techniques.

AB - A CMOS isolation process using a dry liftoff is proposed in which a sputter-deposited SiO2 film is delineated by removing the Mo pattern underneath the SiO2 film making use of the sublimation of the molybdenum oxide. Test CMOS transistors were fabricated. No significant differences were observed in the characteristics of transistors fabricated by dry- and conventional wet-liftoff techniques.

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DO - 10.1143/JJAP.25.1138

M3 - Comment/debate

AN - SCOPUS:84939004419

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JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 7

ER -

An application of the dry liftoff method by molybdenum oxide sublimation to CMOS isolation

Abstract

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