An electron-spectroscopic view of CVD diamond surface conductivity

S. Kono*, M. Shiraishi, T. Goto, T. Abukawa, M. Tachiki, H. Kawarada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


Three diamond (001) samples were made by CVD growth on synthetic diamond substrates in a same batch of growth, for which sheet resistance in atmospheric environment was confirmed. A simple two-point probe method has been applied to the samples to measure sheet resistance in UHV of 0.2-50 MΩ/square. Soft X-ray-induced secondary electron spectroscopy has been used to determine the Fermi level position in UHV of the samples for which in-UHV sheet resistance values were known. The Fermi level as measured turned out to be 1.1±0.2 eV above the valence band top and stayed at the same position within ∼0.1 eV with the sheet resistance change of an order of 2. On the basis of these findings, a plausible model of surface conductivity of CVD diamond is suggested.

Original languageEnglish
Pages (from-to)459-465
Number of pages7
JournalDiamond and Related Materials
Issue number3-7
Publication statusPublished - 2005 Mar


  • Diamond (001)
  • Diamond growth and characterisation
  • Secondary electron spectroscopy
  • Surface conductivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Chemistry
  • Mechanical Engineering
  • General Physics and Astronomy
  • Materials Chemistry
  • Electrical and Electronic Engineering


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