An InGaN-based horizontal-cavity surface-emitting laser diode

Tetsuya Akasaka*, Toshio Nishida, Toshiki Makimoto, Naoki Kobayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


The InGaN-based horizontal-cavity surface-emitting laser diode (HCSELD), fabricated by dry-etching of InGaN-based multilayer on SiC sustrate was discussed. The InGaN-based HCSELD acted as a Fabry-Perrot laser diode which was equipped with outer micromirrors to reflect the laser beam upward. It was found that the cavity mirrors and outer micromirrors were vertical {1120̄} and inclined {1122̄} facets of the regrown Mg-doped GaN layers respectively. Analysis shows that the grown facets were very smooth and showed little angle misalignment.

Original languageEnglish
Pages (from-to)4104-4106
Number of pages3
JournalApplied Physics Letters
Issue number20
Publication statusPublished - 2004 May 17
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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