An investigation of tunable spin-orbit interactions in front-gated In0.75Ga0.25As/In0.75Al0.25As heterojunctions

Yuuki Sato; Shin ichiro Gozu; Tomohiro Kita; Syoji Yamada

doi:10.1016/S1386-9477(01)00057-1

An investigation of tunable spin-orbit interactions in front-gated In_0.75Ga_0.25As/In_0.75Al_0.25As heterojunctions

Yuuki Sato^*, Shin ichiro Gozu, Tomohiro Kita, Syoji Yamada

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We investigated zero-field spin-splitting in normal-type In_0.75Ga_0.25As/In_0.75Al_0.25As heterostructure by magnetoresistance measurements at 1.5K. The maximum value of spin-orbit interaction parameter, α_zero, obtained here is 32×10^-12eVm. We also confirmed a tuning of α_zero by applying gate biases. On the other hand, we observed no beat oscillation when the In_0.75Ga_0.25As well width decreased from 30 to 10nm. These results suggested that interface contribution related to the asymmetry of wave function penetration into the barriers could be enhanced in our heterojunction.

Original language	English
Pages (from-to)	77-80
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	10
Issue number	1-3
DOIs	https://doi.org/10.1016/S1386-9477(01)00057-1
Publication status	Published - 2001 May
Externally published	Yes

Keywords

Narrow gap HEMT
Wave function penetration
Zero-field spin-splitting

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Access to Document

10.1016/S1386-9477(01)00057-1

Cite this

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title = "An investigation of tunable spin-orbit interactions in front-gated In0.75Ga0.25As/In0.75Al0.25As heterojunctions",

abstract = "We investigated zero-field spin-splitting in normal-type In0.75Ga0.25As/In0.75Al0.25As heterostructure by magnetoresistance measurements at 1.5K. The maximum value of spin-orbit interaction parameter, αzero, obtained here is 32×10-12eVm. We also confirmed a tuning of αzero by applying gate biases. On the other hand, we observed no beat oscillation when the In0.75Ga0.25As well width decreased from 30 to 10nm. These results suggested that interface contribution related to the asymmetry of wave function penetration into the barriers could be enhanced in our heterojunction.",

keywords = "Narrow gap HEMT, Wave function penetration, Zero-field spin-splitting",

author = "Yuuki Sato and Gozu, {Shin ichiro} and Tomohiro Kita and Syoji Yamada",

year = "2001",

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doi = "10.1016/S1386-9477(01)00057-1",

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T1 - An investigation of tunable spin-orbit interactions in front-gated In0.75Ga0.25As/In0.75Al0.25As heterojunctions

AU - Sato, Yuuki

AU - Gozu, Shin ichiro

AU - Kita, Tomohiro

AU - Yamada, Syoji

PY - 2001/5

Y1 - 2001/5

N2 - We investigated zero-field spin-splitting in normal-type In0.75Ga0.25As/In0.75Al0.25As heterostructure by magnetoresistance measurements at 1.5K. The maximum value of spin-orbit interaction parameter, αzero, obtained here is 32×10-12eVm. We also confirmed a tuning of αzero by applying gate biases. On the other hand, we observed no beat oscillation when the In0.75Ga0.25As well width decreased from 30 to 10nm. These results suggested that interface contribution related to the asymmetry of wave function penetration into the barriers could be enhanced in our heterojunction.

AB - We investigated zero-field spin-splitting in normal-type In0.75Ga0.25As/In0.75Al0.25As heterostructure by magnetoresistance measurements at 1.5K. The maximum value of spin-orbit interaction parameter, αzero, obtained here is 32×10-12eVm. We also confirmed a tuning of αzero by applying gate biases. On the other hand, we observed no beat oscillation when the In0.75Ga0.25As well width decreased from 30 to 10nm. These results suggested that interface contribution related to the asymmetry of wave function penetration into the barriers could be enhanced in our heterojunction.

KW - Narrow gap HEMT

KW - Wave function penetration

KW - Zero-field spin-splitting

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