Abstract
We fabricated an etched grating filter on a Ti-diffused waveguide in LiNbO3 using inductively coupled plasma etching with C 4F8/Ar as an etching gas, which has an etching rate of 85.1 nm/min. The etched grating filter had a reflectivity of 35% and a bandwidth of 0.02 nm. Maximum reflectivity was obtained when the electric field of an incident beam was perpendicular to the grating.
Original language | English |
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Pages (from-to) | 347-352 |
Number of pages | 6 |
Journal | ieice electronics express |
Volume | 3 |
Issue number | 14 |
DOIs | |
Publication status | Published - 2006 Jul 25 |
Externally published | Yes |
Keywords
- Dry etching, grating
- ICP
- LiNbO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering