An ultra-wideband and low-power amplifier using 0.35-μm SiGe BiCMOS technology

Jia Chen; Toshihiko Yoshimasu; Wei Liang Hu; Haiwen Liu; Nobuyuki Itoh; Koji Yonemura

doi:10.1109/ICCCAS.2006.285208

An ultra-wideband and low-power amplifier using 0.35-μm SiGe BiCMOS technology

Jia Chen^*, Toshihiko Yoshimasu, Wei Liang Hu, Haiwen Liu, Nobuyuki Itoh, Koji Yonemura

^*Corresponding author for this work

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We propose a unique wideband amplifier configuration. The new configuration adopts an improved Darlington amplifier to broaden the bandwidth and flatten the output gain. The low power consumption and matched impedances are also achieved in our amplifier. This circuit has been realized using Toshiba 0.35μm SiGe BiCMOS technology with the fT of 30GHz. The simulation result of the presented amplifier demonstrates 1-10GHz bandwidth and 11.3-dB maximum forward gain (S21) with less than ±0.5-dB gain flatness while it drains 8mA from a 3-V supply. A 1-dB compression point and an DP3 of -12.5dBm and 6dBm respectively also have been reported in this paper.

Original language	English
Title of host publication	2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings - Circuits and Systems
Pages	2614-2617
Number of pages	4
DOIs	https://doi.org/10.1109/ICCCAS.2006.285208
Publication status	Published - 2006
Event	2006 International Conference on Communications, Circuits and Systems, ICCCAS - Guilin, China Duration: 2006 Jun 25 → 2006 Jun 28

Publication series

Name	2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings
Volume	4

Conference

Conference	2006 International Conference on Communications, Circuits and Systems, ICCCAS
Country/Territory	China
City	Guilin
Period	06/6/25 → 06/6/28

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ICCCAS.2006.285208

Cite this

Chen, J., Yoshimasu, T., Hu, W. L., Liu, H., Itoh, N., & Yonemura, K. (2006). An ultra-wideband and low-power amplifier using 0.35-μm SiGe BiCMOS technology. In 2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings - Circuits and Systems (pp. 2614-2617). Article 4064455 (2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings; Vol. 4). https://doi.org/10.1109/ICCCAS.2006.285208

An ultra-wideband and low-power amplifier using 0.35-μm SiGe BiCMOS technology. / Chen, Jia; Yoshimasu, Toshihiko; Hu, Wei Liang et al.
2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings - Circuits and Systems. 2006. p. 2614-2617 4064455 (2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings; Vol. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, J, Yoshimasu, T, Hu, WL, Liu, H, Itoh, N & Yonemura, K 2006, An ultra-wideband and low-power amplifier using 0.35-μm SiGe BiCMOS technology. in 2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings - Circuits and Systems., 4064455, 2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings, vol. 4, pp. 2614-2617, 2006 International Conference on Communications, Circuits and Systems, ICCCAS, Guilin, China, 06/6/25. https://doi.org/10.1109/ICCCAS.2006.285208

Chen J, Yoshimasu T, Hu WL, Liu H, Itoh N, Yonemura K. An ultra-wideband and low-power amplifier using 0.35-μm SiGe BiCMOS technology. In 2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings - Circuits and Systems. 2006. p. 2614-2617. 4064455. (2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings). doi: 10.1109/ICCCAS.2006.285208

@inproceedings{cde1d3bc167e4a74abc4d4bf52a7cdff,

title = "An ultra-wideband and low-power amplifier using 0.35-μm SiGe BiCMOS technology",

abstract = "We propose a unique wideband amplifier configuration. The new configuration adopts an improved Darlington amplifier to broaden the bandwidth and flatten the output gain. The low power consumption and matched impedances are also achieved in our amplifier. This circuit has been realized using Toshiba 0.35μm SiGe BiCMOS technology with the fT of 30GHz. The simulation result of the presented amplifier demonstrates 1-10GHz bandwidth and 11.3-dB maximum forward gain (S21) with less than ±0.5-dB gain flatness while it drains 8mA from a 3-V supply. A 1-dB compression point and an DP3 of -12.5dBm and 6dBm respectively also have been reported in this paper.",

author = "Jia Chen and Toshihiko Yoshimasu and Hu, {Wei Liang} and Haiwen Liu and Nobuyuki Itoh and Koji Yonemura",

year = "2006",

doi = "10.1109/ICCCAS.2006.285208",

language = "English",

isbn = "0780395840",

series = "2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings",

pages = "2614--2617",

booktitle = "2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings - Circuits and Systems",

note = "2006 International Conference on Communications, Circuits and Systems, ICCCAS ; Conference date: 25-06-2006 Through 28-06-2006",

}

TY - GEN

T1 - An ultra-wideband and low-power amplifier using 0.35-μm SiGe BiCMOS technology

AU - Chen, Jia

AU - Yoshimasu, Toshihiko

AU - Hu, Wei Liang

AU - Liu, Haiwen

AU - Itoh, Nobuyuki

AU - Yonemura, Koji

PY - 2006

Y1 - 2006

N2 - We propose a unique wideband amplifier configuration. The new configuration adopts an improved Darlington amplifier to broaden the bandwidth and flatten the output gain. The low power consumption and matched impedances are also achieved in our amplifier. This circuit has been realized using Toshiba 0.35μm SiGe BiCMOS technology with the fT of 30GHz. The simulation result of the presented amplifier demonstrates 1-10GHz bandwidth and 11.3-dB maximum forward gain (S21) with less than ±0.5-dB gain flatness while it drains 8mA from a 3-V supply. A 1-dB compression point and an DP3 of -12.5dBm and 6dBm respectively also have been reported in this paper.

AB - We propose a unique wideband amplifier configuration. The new configuration adopts an improved Darlington amplifier to broaden the bandwidth and flatten the output gain. The low power consumption and matched impedances are also achieved in our amplifier. This circuit has been realized using Toshiba 0.35μm SiGe BiCMOS technology with the fT of 30GHz. The simulation result of the presented amplifier demonstrates 1-10GHz bandwidth and 11.3-dB maximum forward gain (S21) with less than ±0.5-dB gain flatness while it drains 8mA from a 3-V supply. A 1-dB compression point and an DP3 of -12.5dBm and 6dBm respectively also have been reported in this paper.

UR - http://www.scopus.com/inward/record.url?scp=39749139479&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=39749139479&partnerID=8YFLogxK

U2 - 10.1109/ICCCAS.2006.285208

DO - 10.1109/ICCCAS.2006.285208

M3 - Conference contribution

AN - SCOPUS:39749139479

SN - 0780395840

SN - 9780780395848

T3 - 2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings

SP - 2614

EP - 2617

BT - 2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings - Circuits and Systems

T2 - 2006 International Conference on Communications, Circuits and Systems, ICCCAS

Y2 - 25 June 2006 through 28 June 2006

ER -

An ultra-wideband and low-power amplifier using 0.35-μm SiGe BiCMOS technology

Abstract

Publication series

Conference

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this