Analysis of electron beam sensitivity of self-assem bled monolayer resist depending on terminal group

K. Kato; T. Miyake; Y. Beppu; T. Tanii; I. Ohdomari

doi:10.1109/IMNC.2007.4456104

Analysis of electron beam sensitivity of self-assem bled monolayer resist depending on terminal group

K. Kato^*, T. Miyake, Y. Beppu, T. Tanii, I. Ohdomari

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC
Pages	60-61
Number of pages	2
DOIs	https://doi.org/10.1109/IMNC.2007.4456104
Publication status	Published - 2007 Dec 1
Event	s20th International Microprocesses and Nanotechnology Conference, MNC 2007 - Kyoto, Japan Duration: 2007 Nov 5 → 2007 Nov 8

Publication series

Name	Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC

Other

Other	s20th International Microprocesses and Nanotechnology Conference, MNC 2007
Country/Territory	Japan
City	Kyoto
Period	07/11/5 → 07/11/8

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/IMNC.2007.4456104

Cite this

Kato, K., Miyake, T., Beppu, Y., Tanii, T., & Ohdomari, I. (2007). Analysis of electron beam sensitivity of self-assem bled monolayer resist depending on terminal group. In Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC (pp. 60-61). Article 4456104 (Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC). https://doi.org/10.1109/IMNC.2007.4456104

Analysis of electron beam sensitivity of self-assem bled monolayer resist depending on terminal group. / Kato, K.; Miyake, T.; Beppu, Y. et al.
Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC. 2007. p. 60-61 4456104 (Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kato, K, Miyake, T, Beppu, Y, Tanii, T & Ohdomari, I 2007, Analysis of electron beam sensitivity of self-assem bled monolayer resist depending on terminal group. in Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC., 4456104, Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC, pp. 60-61, s20th International Microprocesses and Nanotechnology Conference, MNC 2007, Kyoto, Japan, 07/11/5. https://doi.org/10.1109/IMNC.2007.4456104

Kato K, Miyake T, Beppu Y, Tanii T, Ohdomari I. Analysis of electron beam sensitivity of self-assem bled monolayer resist depending on terminal group. In Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC. 2007. p. 60-61. 4456104. (Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC). doi: 10.1109/IMNC.2007.4456104

Kato, K. ; Miyake, T. ; Beppu, Y. et al. / Analysis of electron beam sensitivity of self-assem bled monolayer resist depending on terminal group. Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC. 2007. pp. 60-61 (Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC).

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ER -

Analysis of electron beam sensitivity of self-assem bled monolayer resist depending on terminal group

Publication series

Other

ASJC Scopus subject areas

Access to Document

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