TY - JOUR
T1 - Analysis of O (1D) distribution by time-resolved measurement of ozone density for application of UV-light excited ozone to oxidation process
AU - Tosaka, Aki
AU - Nishiguchi, Tetsuya
AU - Nonaka, Hidehiko
AU - Ichimura, Shingo
N1 - Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2006
Y1 - 2006
N2 - Silicon oxidation process using UV-light excited ozone, i.e., ca. 100% ozone atmosphere irradiated by KrF excimer laser light (λ = 248 nm), is one of the most promising techniques to fabricate a high-quality SiO 2 film at low temperatures. To clarify the mechanism of the silicon oxidation and to optimize the conditions of oxidation, we have done a time-resolved measurement of ozone density. The result shows that there are three stages of ozone density change. The calculated ozone density based on a reaction model fits the observed density at the first stage.
AB - Silicon oxidation process using UV-light excited ozone, i.e., ca. 100% ozone atmosphere irradiated by KrF excimer laser light (λ = 248 nm), is one of the most promising techniques to fabricate a high-quality SiO 2 film at low temperatures. To clarify the mechanism of the silicon oxidation and to optimize the conditions of oxidation, we have done a time-resolved measurement of ozone density. The result shows that there are three stages of ozone density change. The calculated ozone density based on a reaction model fits the observed density at the first stage.
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U2 - 10.3131/jvsj.49.123
DO - 10.3131/jvsj.49.123
M3 - Article
AN - SCOPUS:33745288195
SN - 0559-8516
VL - 49
SP - 123
EP - 125
JO - Shinku/Journal of the Vacuum Society of Japan
JF - Shinku/Journal of the Vacuum Society of Japan
IS - 3
ER -