Abstract
The soft error rate of a MOS dynamic RAM is strongly influenced by the energy spectrum of the incident alpha particles, the collecting processes of electric charges generated by them, and the critical charge of the device. These effects are clarified in the present paper and some experimental results with 65 K RAMs are described.
| Original language | English |
|---|---|
| Pages (from-to) | 109-114 |
| Number of pages | 6 |
| Journal | Electronics & communications in Japan |
| Volume | 65 |
| Issue number | 4 |
| Publication status | Published - 1982 Apr |
| Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)