Analysis of X-ray diffraction curves of trapezoidal Si nanowires with a strain distribution

Teruaki Takeuchi*, Kosuke Tatsumura, Takayoshi Shimura, Iwao Ohdomari

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


X-ray diffraction curves of oxidized Si nanowires with a strain distribution having a trapezoidal cross-section are analyzed using an X-ray kinematical treatment. The analysis is carried out assuming a strain distribution and cross-sectional shape to calculate a diffraction curve, followed by comparing it to the experimental one. The calculated diffraction curves reproduce the experimental ones over the whole measured range. Particularly, the calculated intensities as well as positions of fringe maxima and minima agree with the experimental curves. Also, the calculation indicates that the strain on a plane parallel to the bases becomes larger, as the plane becomes far from the longer base. This is demonstrated only by calculating X-ray diffraction curves assuming both strain distributions and cross-sectional shapes.

Original languageEnglish
Pages (from-to)116-121
Number of pages6
JournalThin Solid Films
Publication statusPublished - 2016 Aug 1


  • Nanowires
  • Silicon
  • Strain distribution
  • Trapezoidal cross-section
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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