Annealing behavior of irradiation-induced damage in an AlGaAs/GaAs heterostructure by low-energy electron beam

Toshimi Wada; Toshihiko Kanayama; Shingo Ichimura; Yoshinobu Sugiyama; Masanori Komuro

doi:10.1143/JJAP.33.7228

Annealing behavior of irradiation-induced damage in an AlGaAs/GaAs heterostructure by low-energy electron beam

Toshimi Wada, Toshihiko Kanayama, Shingo Ichimura, Yoshinobu Sugiyama, Masanori Komuro

Research output: Contribution to journal › Article › peer-review

Abstract

Evaluating the low-temperature mobility of the two-dimensional electron gas in AlGaAs/GaAs heterostructures, we have studied the nature of the damage induced in the heterostructure by low-energy electron-beam irradiation up to 7.5 keV at room temperature and at 90 K. The isochronal annealing revealed that at around 450 K the degraded mobility recovered quickly in the 90-K-irradiated sample and gradually in the sample irradiated at room temperature. However, the quality of both samples did not recover completely upon annealing at 675 K. The electron-beam irradiation was speculated to cause the formation of As-related defects.

Original language	English
Pages (from-to)	722-721
Number of pages	2
Journal	Japanese journal of applied physics
Volume	33
Issue number	12S
DOIs	https://doi.org/10.1143/JJAP.33.7228
Publication status	Published - 1994 Dec
Externally published	Yes

Keywords

2DEG
AIGaAs/GaAs
As vacancy
Electron-beam lithography
Interstitial As
Irradiation-induced damage
Mobility

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.33.7228

Cite this

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title = "Annealing behavior of irradiation-induced damage in an AlGaAs/GaAs heterostructure by low-energy electron beam",

abstract = "Evaluating the low-temperature mobility of the two-dimensional electron gas in AlGaAs/GaAs heterostructures, we have studied the nature of the damage induced in the heterostructure by low-energy electron-beam irradiation up to 7.5 keV at room temperature and at 90 K. The isochronal annealing revealed that at around 450 K the degraded mobility recovered quickly in the 90-K-irradiated sample and gradually in the sample irradiated at room temperature. However, the quality of both samples did not recover completely upon annealing at 675 K. The electron-beam irradiation was speculated to cause the formation of As-related defects.",

keywords = "2DEG, AIGaAs/GaAs, As vacancy, Electron-beam lithography, Interstitial As, Irradiation-induced damage, Mobility",

author = "Toshimi Wada and Toshihiko Kanayama and Shingo Ichimura and Yoshinobu Sugiyama and Masanori Komuro",

year = "1994",

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publisher = "Japan Society of Applied Physics",

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T1 - Annealing behavior of irradiation-induced damage in an AlGaAs/GaAs heterostructure by low-energy electron beam

AU - Wada, Toshimi

AU - Kanayama, Toshihiko

AU - Ichimura, Shingo

AU - Sugiyama, Yoshinobu

AU - Komuro, Masanori

PY - 1994/12

Y1 - 1994/12

N2 - Evaluating the low-temperature mobility of the two-dimensional electron gas in AlGaAs/GaAs heterostructures, we have studied the nature of the damage induced in the heterostructure by low-energy electron-beam irradiation up to 7.5 keV at room temperature and at 90 K. The isochronal annealing revealed that at around 450 K the degraded mobility recovered quickly in the 90-K-irradiated sample and gradually in the sample irradiated at room temperature. However, the quality of both samples did not recover completely upon annealing at 675 K. The electron-beam irradiation was speculated to cause the formation of As-related defects.

AB - Evaluating the low-temperature mobility of the two-dimensional electron gas in AlGaAs/GaAs heterostructures, we have studied the nature of the damage induced in the heterostructure by low-energy electron-beam irradiation up to 7.5 keV at room temperature and at 90 K. The isochronal annealing revealed that at around 450 K the degraded mobility recovered quickly in the 90-K-irradiated sample and gradually in the sample irradiated at room temperature. However, the quality of both samples did not recover completely upon annealing at 675 K. The electron-beam irradiation was speculated to cause the formation of As-related defects.

KW - 2DEG

KW - AIGaAs/GaAs

KW - As vacancy

KW - Electron-beam lithography

KW - Interstitial As

KW - Irradiation-induced damage

KW - Mobility

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ER -

Annealing behavior of irradiation-induced damage in an AlGaAs/GaAs heterostructure by low-energy electron beam

Abstract

Keywords

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