Annealing behavior of spin density in UHV evaporated amorphous silicon

Takao Yonehara*, Toshio Saitoh, Hiroshi Kawarada, Tohru Hirata, Masakazu Kakumu, Iwao Ohdomari

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)


    The ESR of amorphous silicon films evaporated in UHV has been measured at room temperature. Up to 900°C the annealing behavior of the spin density in the amorphous silicon films is quite different from that of films deposited in conventional HV.

    Original languageEnglish
    Pages (from-to)192-194
    Number of pages3
    Journal"Physics Letters, Section A: General, Atomic and Solid State Physics"
    Issue number2
    Publication statusPublished - 1980

    ASJC Scopus subject areas

    • Physics and Astronomy(all)


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