Annealing effect of Cd + ion-implanted liquid encapsulated Czochralski-GaAs

Y. Kawasumi*, Y. Makita, S. Kimura, T. Iida, M. Kotani, A. Obara, H. Shibata, Naoto Kobayashi, T. Tsukamoto, E. Kobayashi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Furnace annealing (FA) and rapid thermal annealing (RTA) were made for Cd + ion-implanted GaAs with Cd concentration, [Cd] from 1×10 16 cm -3 to 3×10 21 cm -3. In FA samples, Raman scattering spectra exhibited a single peak at 292 cm -1 for entire [Cd] range which is LO-phonon mode from (100) GaAs. In RTA samples, LO-phonon mode is a single peak for [Cd]<1×10 19 cm -3 but with growing [Cd], TO-phonon mode appears for [Cd]>1×10 20 cm -3 and becomes a dominant signal for [Cd]=3×10 21 cm -3. The quenching of LO-phonon mode with increasing [Cd] was more clearly observed in RTA samples than in FA ones. Hall-effects results, however, showed that activation rate of RTA samples is 6 approx. 7 times larger than that of FA ones for [Cd]>1×10 21 cm -3. 2K photoluminescence spectra revealed that in FA samples multiple shallow emissions associated with Cd are formed while in RTA ones the dominant emission is the band to Cd acceptor transition.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Number of pages6
Publication statusPublished - 1996
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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