Annealing effects on Ta doped SnO2 films

Junjun Jia*, Yu Muto, Nobuto Oka, Yuzo Shigesato

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Ta doped SnO2 (TTO) films prepared on quartz glass substrates at 200°C were annealed in the air to investigate the annealing effect on the structural, the optical, and the electrical properties. It is shown that the annealing for TTO films resulted in beneficial effect on the electrical resistivity by improving the carrier density and Hall mobility. The lowest resistivity was 1.4 × 10-3 Ω cm obtained at 400°C annealing temperature. The scattering mechanism in TTO films was discussed from the optical and electrical perspectives. The variation in Hall mobility with increasing the annealing temperature may be attributed to the scattering from the ionized and neutral impurities in TTO films.

Original languageEnglish
Title of host publicationNanocomposites, Nanostructures and Heterostructures of Correlated Oxide Systems
Number of pages7
Publication statusPublished - 2012
Externally publishedYes
Event2012 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2012 Apr 92012 Apr 13

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2012 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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