Abstract
Silicon-to-glass anodic bonding is performed at temperature below 180 °C using lithium aluminosilicate - β-quartz glass-ceramic. High alkaline ion mobility at low temperature which is required for bonding and thermal expansion coefficient matching to Si is realized by controlling the composition of the glass-ceramic. Bonding is obtained at the lowest temperature of 140 °C. Useful bonding conditions are temperature above 160 °C (applied voltage of above 500 V). Since the etch rate of the glass-ceramic is five times higher than that of Pyrex glass in HF wet etching and the undercut is very small with Cr-Au etch mask, three dimensional structures are easily fabricated. Low temperature anodic bonding using this type of glass-ceramic is useful for the packaging and assembling of MEMS.
| Original language | English |
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| Pages | 482-487 |
| Number of pages | 6 |
| Publication status | Published - 1997 Jan 1 |
| Event | Proceedings of the 1997 10th Annual International Workshop on Micro Electro Mechanical Systems, MEMS - Nagoya, Jpn Duration: 1997 Jan 26 → 1997 Jan 30 |
Other
| Other | Proceedings of the 1997 10th Annual International Workshop on Micro Electro Mechanical Systems, MEMS |
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| City | Nagoya, Jpn |
| Period | 97/1/26 → 97/1/30 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Mechanical Engineering
- Electrical and Electronic Engineering