Application of 100% ozone gas process to rapid low-temperature oxidation

H. Nonaka; Shingo Ichimura; T. Nishiguchi; Y. Morikawa; M. Kekura; M. Miyamoto

doi:10.1109/RTP.2002.1039449

Application of 100% ozone gas process to rapid low-temperature oxidation

H. Nonaka, Shingo Ichimura, T. Nishiguchi, Y. Morikawa, M. Kekura, M. Miyamoto

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A 100% ozone oxidation process has been applied for the first time to rapid low-temperature oxidation of silicon to fabricate device quality SiO₂ films. A new quartz cold wall-type furnace equipped with a halogen lamp heater was built for safe and efficient handling of 100% ozone gas supplied from a pure ozone generator which we have developed. The working pressure of the furnace was typically 900 Pa, which resulted in the growth of 4 nm SiO₂ film within 4 minutes at 400°C. A very low excitation energy observed for the SiO₂ film growth indicates that the actual reaction species in the process are active oxygen radicals generated from the thermal decomposition of ozone molecules at the sample surface. The electrical properties of ozone-oxidized SiO₂ films were evaluated by measuring the C-V and I-V characteristics of the MIS structure with Al electrodes. The films fabricated at 400-600°C with thickness of 5-11 nm all show properties matching the device quality, i.e. low interface state density (<5×10¹⁰ cm^-2eV^-1) and high breakdown voltage (>13 MVcm^-1).

Original language	English
Title of host publication	10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	119-123
Number of pages	5
ISBN (Electronic)	0780374657, 9780780374652
DOIs	https://doi.org/10.1109/RTP.2002.1039449
Publication status	Published - 2002 Jan 1
Externally published	Yes
Event	10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002 - Vancouver, Canada Duration: 2002 Sept 25 → 2002 Sept 27

Other

Other	10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002
Country/Territory	Canada
City	Vancouver
Period	02/9/25 → 02/9/27

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering

Access to Document

10.1109/RTP.2002.1039449

Cite this

Nonaka, H., Ichimura, S., Nishiguchi, T., Morikawa, Y., Kekura, M., & Miyamoto, M. (2002). Application of 100% ozone gas process to rapid low-temperature oxidation. In 10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002 (pp. 119-123). [1039449] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RTP.2002.1039449

Application of 100% ozone gas process to rapid low-temperature oxidation. / Nonaka, H.; Ichimura, Shingo; Nishiguchi, T. et al.
10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002. Institute of Electrical and Electronics Engineers Inc., 2002. p. 119-123 1039449.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nonaka, H, Ichimura, S, Nishiguchi, T, Morikawa, Y, Kekura, M & Miyamoto, M 2002, Application of 100% ozone gas process to rapid low-temperature oxidation. in 10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002., 1039449, Institute of Electrical and Electronics Engineers Inc., pp. 119-123, 10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002, Vancouver, Canada, 02/9/25. https://doi.org/10.1109/RTP.2002.1039449

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title = "Application of 100% ozone gas process to rapid low-temperature oxidation",

abstract = "A 100% ozone oxidation process has been applied for the first time to rapid low-temperature oxidation of silicon to fabricate device quality SiO2 films. A new quartz cold wall-type furnace equipped with a halogen lamp heater was built for safe and efficient handling of 100% ozone gas supplied from a pure ozone generator which we have developed. The working pressure of the furnace was typically 900 Pa, which resulted in the growth of 4 nm SiO2 film within 4 minutes at 400°C. A very low excitation energy observed for the SiO2 film growth indicates that the actual reaction species in the process are active oxygen radicals generated from the thermal decomposition of ozone molecules at the sample surface. The electrical properties of ozone-oxidized SiO2 films were evaluated by measuring the C-V and I-V characteristics of the MIS structure with Al electrodes. The films fabricated at 400-600°C with thickness of 5-11 nm all show properties matching the device quality, i.e. low interface state density (<5×1010 cm-2eV-1) and high breakdown voltage (>13 MVcm-1).",

author = "H. Nonaka and Shingo Ichimura and T. Nishiguchi and Y. Morikawa and M. Kekura and M. Miyamoto",

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AU - Miyamoto, M.

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N2 - A 100% ozone oxidation process has been applied for the first time to rapid low-temperature oxidation of silicon to fabricate device quality SiO2 films. A new quartz cold wall-type furnace equipped with a halogen lamp heater was built for safe and efficient handling of 100% ozone gas supplied from a pure ozone generator which we have developed. The working pressure of the furnace was typically 900 Pa, which resulted in the growth of 4 nm SiO2 film within 4 minutes at 400°C. A very low excitation energy observed for the SiO2 film growth indicates that the actual reaction species in the process are active oxygen radicals generated from the thermal decomposition of ozone molecules at the sample surface. The electrical properties of ozone-oxidized SiO2 films were evaluated by measuring the C-V and I-V characteristics of the MIS structure with Al electrodes. The films fabricated at 400-600°C with thickness of 5-11 nm all show properties matching the device quality, i.e. low interface state density (<5×1010 cm-2eV-1) and high breakdown voltage (>13 MVcm-1).

AB - A 100% ozone oxidation process has been applied for the first time to rapid low-temperature oxidation of silicon to fabricate device quality SiO2 films. A new quartz cold wall-type furnace equipped with a halogen lamp heater was built for safe and efficient handling of 100% ozone gas supplied from a pure ozone generator which we have developed. The working pressure of the furnace was typically 900 Pa, which resulted in the growth of 4 nm SiO2 film within 4 minutes at 400°C. A very low excitation energy observed for the SiO2 film growth indicates that the actual reaction species in the process are active oxygen radicals generated from the thermal decomposition of ozone molecules at the sample surface. The electrical properties of ozone-oxidized SiO2 films were evaluated by measuring the C-V and I-V characteristics of the MIS structure with Al electrodes. The films fabricated at 400-600°C with thickness of 5-11 nm all show properties matching the device quality, i.e. low interface state density (<5×1010 cm-2eV-1) and high breakdown voltage (>13 MVcm-1).

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ER -

Application of 100% ozone gas process to rapid low-temperature oxidation

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