Application of 2DHG Diamond p-FET in Cascode with Normally-OFF Operation and a Breakdown Voltage of over 1.7 kV

Te Bi; Junxiong Niu; Nobutaka Oi; Masafumi Inaba; Toshio Sasaki; Hiroshi Kawarada

doi:10.1109/TED.2020.3019020

Application of 2DHG Diamond p-FET in Cascode with Normally-OFF Operation and a Breakdown Voltage of over 1.7 kV

Te Bi, Junxiong Niu, Nobutaka Oi, Masafumi Inaba, Toshio Sasaki, Hiroshi Kawarada^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Hydrogen-terminated (C-H) diamond has a high current density owing to the 2-D hole gas (2DHG) on its C-H diamond surface. The C-H diamond metal-oxide-semiconductor field-effect transistor (MOSFET) has high-breakdown-voltage characteristics but exhibits normally-ON operation. For security and energy-saving purposes, we fabricated the diamond cascode using the C-H diamond p-channel field-effect transistor (p-FET) combination with the normally- OFF silicon p-FET. The diamond cascode exhibits normally- OFF characteristics and a high breakdown voltage of more than 1.7-kV.

Original language	English
Article number	9189858
Pages (from-to)	4006-4009
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	67
Issue number	10
DOIs	https://doi.org/10.1109/TED.2020.3019020
Publication status	Published - 2020 Oct

Keywords

C-H diamond
cascode
normally-OFF
p-channel field-effect transistor (p-FETs)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2020.3019020

Cite this

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title = "Application of 2DHG Diamond p-FET in Cascode with Normally-OFF Operation and a Breakdown Voltage of over 1.7 kV",

abstract = "Hydrogen-terminated (C-H) diamond has a high current density owing to the 2-D hole gas (2DHG) on its C-H diamond surface. The C-H diamond metal-oxide-semiconductor field-effect transistor (MOSFET) has high-breakdown-voltage characteristics but exhibits normally-ON operation. For security and energy-saving purposes, we fabricated the diamond cascode using the C-H diamond p-channel field-effect transistor (p-FET) combination with the normally- OFF silicon p-FET. The diamond cascode exhibits normally- OFF characteristics and a high breakdown voltage of more than 1.7-kV.",

keywords = "C-H diamond, cascode, normally-OFF, p-channel field-effect transistor (p-FETs)",

author = "Te Bi and Junxiong Niu and Nobutaka Oi and Masafumi Inaba and Toshio Sasaki and Hiroshi Kawarada",

note = "Funding Information: Manuscript received March 31, 2020; revised May 21, 2020 and July 14, 2020; accepted August 17, 2020. Date of publication September 9, 2020; date of current version September 22, 2020. This work was supported by the Research Organization for Nano & Life Innovation, Waseda University. The review of this article was arranged by Editor J. Shi. (Corresponding author: Hiroshi Kawarada.) Te Bi, Junxiong Niu, Nobutaka Oi, and Masafumi Inaba are with the Faculty of Science and Engineering, Waseda University, Shinjuku 169-8555, Japan. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2020",

month = oct,

doi = "10.1109/TED.2020.3019020",

language = "English",

volume = "67",

pages = "4006--4009",

journal = "IEEE Transactions on Electron Devices",

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T1 - Application of 2DHG Diamond p-FET in Cascode with Normally-OFF Operation and a Breakdown Voltage of over 1.7 kV

AU - Bi, Te

AU - Niu, Junxiong

AU - Oi, Nobutaka

AU - Inaba, Masafumi

AU - Sasaki, Toshio

AU - Kawarada, Hiroshi

N1 - Funding Information: Manuscript received March 31, 2020; revised May 21, 2020 and July 14, 2020; accepted August 17, 2020. Date of publication September 9, 2020; date of current version September 22, 2020. This work was supported by the Research Organization for Nano & Life Innovation, Waseda University. The review of this article was arranged by Editor J. Shi. (Corresponding author: Hiroshi Kawarada.) Te Bi, Junxiong Niu, Nobutaka Oi, and Masafumi Inaba are with the Faculty of Science and Engineering, Waseda University, Shinjuku 169-8555, Japan. Publisher Copyright: © 1963-2012 IEEE.

PY - 2020/10

Y1 - 2020/10

N2 - Hydrogen-terminated (C-H) diamond has a high current density owing to the 2-D hole gas (2DHG) on its C-H diamond surface. The C-H diamond metal-oxide-semiconductor field-effect transistor (MOSFET) has high-breakdown-voltage characteristics but exhibits normally-ON operation. For security and energy-saving purposes, we fabricated the diamond cascode using the C-H diamond p-channel field-effect transistor (p-FET) combination with the normally- OFF silicon p-FET. The diamond cascode exhibits normally- OFF characteristics and a high breakdown voltage of more than 1.7-kV.

AB - Hydrogen-terminated (C-H) diamond has a high current density owing to the 2-D hole gas (2DHG) on its C-H diamond surface. The C-H diamond metal-oxide-semiconductor field-effect transistor (MOSFET) has high-breakdown-voltage characteristics but exhibits normally-ON operation. For security and energy-saving purposes, we fabricated the diamond cascode using the C-H diamond p-channel field-effect transistor (p-FET) combination with the normally- OFF silicon p-FET. The diamond cascode exhibits normally- OFF characteristics and a high breakdown voltage of more than 1.7-kV.

KW - C-H diamond

KW - cascode

KW - normally-OFF

KW - p-channel field-effect transistor (p-FETs)

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Application of 2DHG Diamond p-FET in Cascode with Normally-OFF Operation and a Breakdown Voltage of over 1.7 kV

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Keywords

ASJC Scopus subject areas

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