Application of I-structure though-glass interconnect filled with submicron gold particles to a hermetic sealing device

Kazuya Nomura; Akiko Okada; Shuichi Shoji; Toshinori Ogashiwa; Jun Mizuno

doi:10.1088/0960-1317/26/10/105018

Application of I-structure though-glass interconnect filled with submicron gold particles to a hermetic sealing device

Kazuya Nomura, Akiko Okada, Shuichi Shoji, Toshinori Ogashiwa, Jun Mizuno

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We propose hermetic sealing of a glass-to-glass structure with an I-structure through-glass interconnect via (TGV) filled with submicron Au particles. The top and bottom bumps and the TGV were formed by a simple filling process with a bump-patterned dry film resist. The sealing devices consisting of two glass substrates were bonded via Au interlayers. Vacuum ultraviolet irradiation in the presence of oxygen gas (VUV/O₃) pretreatment was used for low-temperature Au-Au bonding at 200 °C. The bonded samples showed He leakage rates of less than 1.3 × 10^-9 Pa m³ s^-1. The cross-sectional scanning electron microscope images of the fabricated I-structure TGV showed perfect adhesion between the I-structure TGV and glass substrate. These results indicate that the proposed I-structure TGV is suitable for hermetic sealing devices.

Original language	English
Article number	105018
Journal	Journal of Micromechanics and Microengineering
Volume	26
Issue number	10
DOIs	https://doi.org/10.1088/0960-1317/26/10/105018
Publication status	Published - 2016 Sept 19

Keywords

3D integration
VUV/O treatment
daisy chain
glass-to-glass structure
gold particles
hermetic sealing
low-temperature bonding

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0960-1317/26/10/105018

Cite this

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title = "Application of I-structure though-glass interconnect filled with submicron gold particles to a hermetic sealing device",

abstract = "We propose hermetic sealing of a glass-to-glass structure with an I-structure through-glass interconnect via (TGV) filled with submicron Au particles. The top and bottom bumps and the TGV were formed by a simple filling process with a bump-patterned dry film resist. The sealing devices consisting of two glass substrates were bonded via Au interlayers. Vacuum ultraviolet irradiation in the presence of oxygen gas (VUV/O3) pretreatment was used for low-temperature Au-Au bonding at 200 °C. The bonded samples showed He leakage rates of less than 1.3 × 10-9 Pa m3 s-1. The cross-sectional scanning electron microscope images of the fabricated I-structure TGV showed perfect adhesion between the I-structure TGV and glass substrate. These results indicate that the proposed I-structure TGV is suitable for hermetic sealing devices.",

keywords = "3D integration, VUV/O treatment, daisy chain, glass-to-glass structure, gold particles, hermetic sealing, low-temperature bonding",

author = "Kazuya Nomura and Akiko Okada and Shuichi Shoji and Toshinori Ogashiwa and Jun Mizuno",

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AU - Nomura, Kazuya

AU - Okada, Akiko

AU - Shoji, Shuichi

AU - Ogashiwa, Toshinori

AU - Mizuno, Jun

PY - 2016/9/19

Y1 - 2016/9/19

N2 - We propose hermetic sealing of a glass-to-glass structure with an I-structure through-glass interconnect via (TGV) filled with submicron Au particles. The top and bottom bumps and the TGV were formed by a simple filling process with a bump-patterned dry film resist. The sealing devices consisting of two glass substrates were bonded via Au interlayers. Vacuum ultraviolet irradiation in the presence of oxygen gas (VUV/O3) pretreatment was used for low-temperature Au-Au bonding at 200 °C. The bonded samples showed He leakage rates of less than 1.3 × 10-9 Pa m3 s-1. The cross-sectional scanning electron microscope images of the fabricated I-structure TGV showed perfect adhesion between the I-structure TGV and glass substrate. These results indicate that the proposed I-structure TGV is suitable for hermetic sealing devices.

AB - We propose hermetic sealing of a glass-to-glass structure with an I-structure through-glass interconnect via (TGV) filled with submicron Au particles. The top and bottom bumps and the TGV were formed by a simple filling process with a bump-patterned dry film resist. The sealing devices consisting of two glass substrates were bonded via Au interlayers. Vacuum ultraviolet irradiation in the presence of oxygen gas (VUV/O3) pretreatment was used for low-temperature Au-Au bonding at 200 °C. The bonded samples showed He leakage rates of less than 1.3 × 10-9 Pa m3 s-1. The cross-sectional scanning electron microscope images of the fabricated I-structure TGV showed perfect adhesion between the I-structure TGV and glass substrate. These results indicate that the proposed I-structure TGV is suitable for hermetic sealing devices.

KW - 3D integration

KW - VUV/O treatment

KW - daisy chain

KW - glass-to-glass structure

KW - gold particles

KW - hermetic sealing

KW - low-temperature bonding

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ER -

Application of I-structure though-glass interconnect filled with submicron gold particles to a hermetic sealing device

Abstract

Keywords

ASJC Scopus subject areas

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