Area-selective epitaxy of GaAs by migration-enhanced epitaxy with As2 and As4 arsenic sources

A. Kawaharazuka; I. Yoshiba; Y. Horikoshi

doi:10.1016/j.apsusc.2008.07.033

Area-selective epitaxy of GaAs by migration-enhanced epitaxy with As₂ and As₄ arsenic sources

A. Kawaharazuka^*, I. Yoshiba, Y. Horikoshi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We demonstrate area-selective epitaxy by migration-enhanced epitaxy with As₂ and As₄ as arsenic sources. The distinct whisker structure growing in [1 1 1]B direction is obtained when employing As₂ as an arsenic source, while (1 1 1)B facet is formed with As₄. The difference in the facet formation can be explained by the formation of As-trimer, which significantly reduces the growth rate of the (1 1 1)B surface. With As₂, area-selective epitaxy can be achieved at lower arsenic pressure condition, where less As-trimers are formed. Therefore, growth in the [1 1 1]B direction is enhanced.

Original language	English
Pages (from-to)	737-739
Number of pages	3
Journal	Applied Surface Science
Volume	255
Issue number	3
DOIs	https://doi.org/10.1016/j.apsusc.2008.07.033
Publication status	Published - 2008 Nov 30

Keywords

Area-selective epitaxy
As
As
GaAs
Molecular beam epitaxy

ASJC Scopus subject areas

Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2008.07.033

Cite this

@article{e8fb60c125de4899a0fc617a88d9aa47,

title = "Area-selective epitaxy of GaAs by migration-enhanced epitaxy with As2 and As4 arsenic sources",

abstract = "We demonstrate area-selective epitaxy by migration-enhanced epitaxy with As2 and As4 as arsenic sources. The distinct whisker structure growing in [1 1 1]B direction is obtained when employing As2 as an arsenic source, while (1 1 1)B facet is formed with As4. The difference in the facet formation can be explained by the formation of As-trimer, which significantly reduces the growth rate of the (1 1 1)B surface. With As2, area-selective epitaxy can be achieved at lower arsenic pressure condition, where less As-trimers are formed. Therefore, growth in the [1 1 1]B direction is enhanced.",

keywords = "Area-selective epitaxy, As, As, GaAs, Molecular beam epitaxy",

author = "A. Kawaharazuka and I. Yoshiba and Y. Horikoshi",

year = "2008",

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doi = "10.1016/j.apsusc.2008.07.033",

language = "English",

volume = "255",

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journal = "Applied Surface Science",

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TY - JOUR

T1 - Area-selective epitaxy of GaAs by migration-enhanced epitaxy with As2 and As4 arsenic sources

AU - Kawaharazuka, A.

AU - Yoshiba, I.

AU - Horikoshi, Y.

PY - 2008/11/30

Y1 - 2008/11/30

N2 - We demonstrate area-selective epitaxy by migration-enhanced epitaxy with As2 and As4 as arsenic sources. The distinct whisker structure growing in [1 1 1]B direction is obtained when employing As2 as an arsenic source, while (1 1 1)B facet is formed with As4. The difference in the facet formation can be explained by the formation of As-trimer, which significantly reduces the growth rate of the (1 1 1)B surface. With As2, area-selective epitaxy can be achieved at lower arsenic pressure condition, where less As-trimers are formed. Therefore, growth in the [1 1 1]B direction is enhanced.

AB - We demonstrate area-selective epitaxy by migration-enhanced epitaxy with As2 and As4 as arsenic sources. The distinct whisker structure growing in [1 1 1]B direction is obtained when employing As2 as an arsenic source, while (1 1 1)B facet is formed with As4. The difference in the facet formation can be explained by the formation of As-trimer, which significantly reduces the growth rate of the (1 1 1)B surface. With As2, area-selective epitaxy can be achieved at lower arsenic pressure condition, where less As-trimers are formed. Therefore, growth in the [1 1 1]B direction is enhanced.

KW - Area-selective epitaxy

KW - As

KW - GaAs

KW - Molecular beam epitaxy

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