Atom probe study of erbium and oxygen co-implanted silicon

Yasuo Shimizu, Yuan Tu, Ayman Abdelghafar, Maasa Yano, Yudai Suzuki, Takashi Tanii, Takahiro Shinada, Enrico Prati, Michele Celebrano, Marco Finazzi, Lavinia Ghirardini, Koji Inoue, Yasuyoshi Nagai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)


It has been reported that erbium (Er) is a source of optical emission at λ=1.54 pm due to 4I13/24I15/2 transition of Er3+. A method of oxygen (O) codoping with Er has attracted attention as a candidate for obtaining more efficient optical gain by forming Er:O complex. Although several simulations predict the equilibrium structure of Er:O complex, it is difficult to understand experimentally how related between these implanted ions followed by annealing for optical activation. In this workshop, we reported the preliminary results on three-dimensional distributions of Er and O co-implanted into Si investigated by atom probe tomography.

Original languageEnglish
Title of host publication2017 Silicon Nanoelectronics Workshop, SNW 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Electronic)9784863486478
Publication statusPublished - 2017 Dec 29
Event22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan
Duration: 2017 Jun 42017 Jun 5

Publication series

Name2017 Silicon Nanoelectronics Workshop, SNW 2017


Other22nd Silicon Nanoelectronics Workshop, SNW 2017

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


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