Atomic and electronic structure of misfit dislocations in GaSb/GaAs(0 0 1)

Nori Miyagishima; Takuya Shinoda; Ken Suzuki; Tadasuke Kaneko; Kyozaburo Takeda; Kenji Shiraishi; Tomonori Ito

doi:10.1016/j.physb.2003.09.195

Atomic and electronic structure of misfit dislocations in GaSb/GaAs(0 0 1)

Nori Miyagishima^*, Takuya Shinoda, Ken Suzuki, Tadasuke Kaneko, Kyozaburo Takeda, Kenji Shiraishi, Tomonori Ito

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

We investigated the atomic and electronic structures of the periodic misfit dislocations (MDs) found in GaSb/GaAs (0 0 1). In order to determine the details of these structures, we carried out the first-principle total energy calculations. The characteristic feature in the MDs is the appearance of the anion-anion or cation-cation bond in order to avoid the formation of dangling bonds. As a result, the dislocation core structure form five- and seven-membered rings. These MDs electronically cause the impurity levels in the band gap. The individual MDs have the possibility to form one-dimensional electron- and hole-paths along the dislocation line.

Original language	English
Pages (from-to)	1009-1012
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	340-342
DOIs	https://doi.org/10.1016/j.physb.2003.09.195
Publication status	Published - 2003 Dec 31
Event	Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: 2003 Jul 28 → 2003 Aug 1

Keywords

First-principle total energy calculations
Misfit dislocation
Semiconductor heteroepitaxy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2003.09.195

Cite this

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title = "Atomic and electronic structure of misfit dislocations in GaSb/GaAs(0 0 1)",

abstract = "We investigated the atomic and electronic structures of the periodic misfit dislocations (MDs) found in GaSb/GaAs (0 0 1). In order to determine the details of these structures, we carried out the first-principle total energy calculations. The characteristic feature in the MDs is the appearance of the anion-anion or cation-cation bond in order to avoid the formation of dangling bonds. As a result, the dislocation core structure form five- and seven-membered rings. These MDs electronically cause the impurity levels in the band gap. The individual MDs have the possibility to form one-dimensional electron- and hole-paths along the dislocation line.",

keywords = "First-principle total energy calculations, Misfit dislocation, Semiconductor heteroepitaxy",

author = "Nori Miyagishima and Takuya Shinoda and Ken Suzuki and Tadasuke Kaneko and Kyozaburo Takeda and Kenji Shiraishi and Tomonori Ito",

year = "2003",

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doi = "10.1016/j.physb.2003.09.195",

language = "English",

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journal = "Physica B: Condensed Matter",

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note = "Proceedings of the 22nd International Conference on Defects in (ICDS-22) ; Conference date: 28-07-2003 Through 01-08-2003",

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TY - JOUR

T1 - Atomic and electronic structure of misfit dislocations in GaSb/GaAs(0 0 1)

AU - Miyagishima, Nori

AU - Shinoda, Takuya

AU - Suzuki, Ken

AU - Kaneko, Tadasuke

AU - Takeda, Kyozaburo

AU - Shiraishi, Kenji

AU - Ito, Tomonori

PY - 2003/12/31

Y1 - 2003/12/31

N2 - We investigated the atomic and electronic structures of the periodic misfit dislocations (MDs) found in GaSb/GaAs (0 0 1). In order to determine the details of these structures, we carried out the first-principle total energy calculations. The characteristic feature in the MDs is the appearance of the anion-anion or cation-cation bond in order to avoid the formation of dangling bonds. As a result, the dislocation core structure form five- and seven-membered rings. These MDs electronically cause the impurity levels in the band gap. The individual MDs have the possibility to form one-dimensional electron- and hole-paths along the dislocation line.

AB - We investigated the atomic and electronic structures of the periodic misfit dislocations (MDs) found in GaSb/GaAs (0 0 1). In order to determine the details of these structures, we carried out the first-principle total energy calculations. The characteristic feature in the MDs is the appearance of the anion-anion or cation-cation bond in order to avoid the formation of dangling bonds. As a result, the dislocation core structure form five- and seven-membered rings. These MDs electronically cause the impurity levels in the band gap. The individual MDs have the possibility to form one-dimensional electron- and hole-paths along the dislocation line.

KW - First-principle total energy calculations

KW - Misfit dislocation

KW - Semiconductor heteroepitaxy

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SN - 0921-4526

VL - 340-342

SP - 1009

EP - 1012

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 22nd International Conference on Defects in (ICDS-22)

Y2 - 28 July 2003 through 1 August 2003

ER -

Atomic and electronic structure of misfit dislocations in GaSb/GaAs(0 0 1)

Abstract

Keywords

ASJC Scopus subject areas

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