Atomic and electronic structure of misfit dislocations in GaSb/GaAs(0 0 1)

Nori Miyagishima*, Takuya Shinoda, Ken Suzuki, Tadasuke Kaneko, Kyozaburo Takeda, Kenji Shiraishi, Tomonori Ito

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


We investigated the atomic and electronic structures of the periodic misfit dislocations (MDs) found in GaSb/GaAs (0 0 1). In order to determine the details of these structures, we carried out the first-principle total energy calculations. The characteristic feature in the MDs is the appearance of the anion-anion or cation-cation bond in order to avoid the formation of dangling bonds. As a result, the dislocation core structure form five- and seven-membered rings. These MDs electronically cause the impurity levels in the band gap. The individual MDs have the possibility to form one-dimensional electron- and hole-paths along the dislocation line.

Original languageEnglish
Pages (from-to)1009-1012
Number of pages4
JournalPhysica B: Condensed Matter
Publication statusPublished - 2003 Dec 31
EventProceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark
Duration: 2003 Jul 282003 Aug 1


  • First-principle total energy calculations
  • Misfit dislocation
  • Semiconductor heteroepitaxy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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